Power Supply IC S1F77B01 Technical Manual SEIKO EPSON CORPORATION Rev.1.
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Configuration of product number zDEVICES S1 F 77B01 B 0C00 00 Packing specifications Specifications Shape (B:WCSP, Y:SOT) Model number Model name (F : Power Supply) Product classification (S1:Semiconductors)
CONTENTS 1. DESCRIPTION ................................................................................................................................. 1 2. FEATURES ...................................................................................................................................... 1 3. PACKAGE........................................................................................................................................ 1 4. APPLICATION ...........................................
1. DESCRIPTION 1. DESCRIPTION The S1F77B01 is a CMOS detector that runs at superlow consumption current 350nA (Typ.). The detecting voltage can be selected in the range from 1.5V to 4.6V which is set to high accuracy ±2.0% in 0.1V steps. The power voltage is allowable in the range of low voltage 0.9 to 5.5V. This detector adopts a compact package, which is available in a compact mobile device. 2. • • • • • • 3.
5. BLOCK DIAGRAM 5. BLOCK DIAGRAM zCMOS output VREF Delay circuit VDD VOUT VSS DS* zNch open drain output VREF Delay circuit VDD VOUT VSS DS* Note: SOT23 package product only; otherwise, a product with DS pin set to NC The DS pin must be fixed to “LOW” outside the IC. 2 EPSON S1F77B01 Technical Manual (Rev.1.
6. SELECTION GUIDE 6. SELECTION GUIDE S1F77B01 * * * * 0 * * a bcd e a b c d e 7. Package type SOT23 5PIN “Y” WCSP 4PIN “B” Indicates a value that is ten times the detecting voltage. For CMOS output, delay 50ms “C” For CMOS output, delay 100ms “D” For CMOS output, delay 200ms “E” For Nch open drain output, delay 50ms “L” For Nch open drain output, delay 100ms “M” For Nch open drain output, delay 200ms “N” Fixed to 0 in this IC.
. 8. MARKING MARKING SOT23 5PIN WCSP 4PIN 3 4 5 a b c d e a b d : Product code c d e : Lot code 1 2 3 CMOS VdetOption 1.5V 1.6V 1.7V 1.8V 1.9V 2.0V 2.1V 2.2V 2.3V 2.4V 2.5V 2.6V 2.7V 2.8V 2.9V 3.0V 3.1V 3.2V 3.3V 3.4V 3.5V 3.6V 3.7V 3.8V 3.9V 4.0V 4.1V 4.2V 4.3V 4.4V 4.5V 4.
. 9. MARKING MARKING SOT23 5PIN 3 4 5 a b c d 1 WCSP 4PIN 2 a b e c d : Product code d e : Lot code a Top View 4 a b : Product code b c c d : Lot code 3 1 Nch open drain VdetDelay time 50ms Option a b 1.5V B 5 1.6V B 6 1.7V B 7 1.8V B 8 1.9V B 9 2.0V J 0 2.1V J 1 2.2V J 2 2.3V J 3 2.4V J 4 2.5V J 5 2.6V J 6 2.7V J 7 2.8V J 8 2.9V J 9 3.0V J A 3.1V J B 3.2V J C 3.3V J D 3.4V J E 3.5V J F 3.6V J G 3.7V J H 3.8V J J 3.9V J K 4.0V J L 4.1V J M 4.2V J N 4.3V J P 4.4V J Q 4.5V J R 4.
. PIN DESCRIPTION 10. PIN DESCRIPTION For SOT-23-5 Pin No. 1 2 3 4 5 Pin Name DS VSS NC VOUT VDD Function Fixed to “LOW”. GND pin. No connection Voltage detection output pin Power input pin For WCSP Pin No. 1 2 3 4 11. Pin Name DS VSS VDD VOUT Function Fixed to “LOW”. GND pin.
12. TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS 12. TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS zCMOS Power voltage VDD Release voltage VDET+ Detecting voltage VDET- Hysteresis width Min. operating voltage VDD VSS VOUT DS V VSS Output voltage Recommended circuit diagram td zNch open drain Power voltage VDD Release voltage VDET+ Detecting voltage VDET- Hysteresis width Min.
13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS 13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS (1) CMOS output (Ta=25°C RL=∞ unless otherwise specified) Item Detecting voltage Hysteresis width Symbol VDETVHYS Consumption current 1 ISS1 Consumption current 2 ISS2 Max. operating voltage Min. operating voltage VDDH VDDL IOUTN Output current IOUTP Delay time td Response time Detecting voltage temperature coefficient tPHL ∆VDET ∆Topt Conditions Min. Typ. Max.
14. CHARACTERISTIC MEASURING CIRCUITS 14. CHARACTERISTIC MEASURING CIRCUITS VDET-, VHYS, tPLH, td 5V 470kΩ VDD VDD Note: No pull-up resistor for CMOS output A: When fixed to DS=”LOW” B: When fixed to DS=”HIGH” VOUT B V VSS V DS A Fig.1 ISS1, ISS2 VDD A VOUT VDD VSS, DS Fig.2 S1F77B01 Technical Manual (Rev.1.
. CHARACTERISTIC MEASURING CIRCUITS IOUT Nch, ILEAK VDD VDD V A VOUT VDS V VSS, DS Fig.3 IOUT Pch V VDD VDD V VOUT VDS A VSS, DS Fig.4 10 EPSON S1F77B01 Technical Manual (Rev.1.
14. CHARACTERISTIC MEASURING CIRCUITS zDescription of tPHL Input: VDD VDD=VDET+ +1.0V *3 VDD=0.9V Output: VOUT VDD=VDET+ tPHL +1.0V 50% VOUT=VDD(0.9V) VSS *3: VDET+ indicates the actual release voltage. VDET+=VDET-×1.05 (Typ.) (1) For CMOS output tPHL provides the timeframe ranging from a time when the pulse voltage (VDET+)+1.0V → 0.9V is applied to VDD, to a time when the output voltage reaches VDD/2.
15. DIMENSIONS 15. DIMENSIONS ・SOT23 5PIN l2 bi 4PIN 1PIN HE E θ 5PIN 3PIN D θ θ1 θ1 l2 θ bi 2.40 1.00 0.95 0.80 AMax. U A1 A2 b L y S e S Symbol D E AMax. AL Ae e lo C L L1 HE y L1 Min. 0 0.3 0.1 0.2 - Dimention In Millmeters Nom. Max. 2.9 1.6 1.40 0.15 1.1 0.95 0.5 0.26 0.6 0.6 2.8 0.1 1 = 1mm 12 EPSON S1F77B01 Technical Manual (Rev.1.
15. DIMENSIONS ・WCSP 4PIN Top View E D INDEX A A2 A1 CORNER A1 S y S Bottom View e1 SE SD B e2 e3 A 2 b 1 A1 CORNER S1F77B01 Technical Manual (Rev.1.3) Symbol D E A A1 A2 e1 e2 e3 b x y SD SE EPSON Min. 0.82 0.82 0.18 0.23 - [Unit: mm] Dimention In Millmeters Nom. Max. 0.92 1.02 0.92 1.02 0.67 0.21 0.24 0.40 0.50 0.50 0.71 0.26 0.29 0.08 0.05 0.25 0.
16. CHARACTERISTIC EXAMPLE 16.
16. CHARACTERISTIC EXAMPLE (5) Nch output current VDS=0.5V (CMOS) (6) Pch output current VDS=0.5V (CMOS) S1F77B01Y27000R S1F77B01Y27000R S1F77B01Y27000R S1F77B01Y27000R 0.6 0.4 IIOUT[mA] OUT[mA] IOUT[mA] IOUT[mA] 0.5 0.3 0.2 0.1 0 0 0.2 0.4 0.6 VDD[V] V DD[V] 0.8 20.00 18.00 16.00 14.00 12.00 10.00 8.00 6.00 4.00 2.00 0.00 0.00 1 1.00 2.00 3.
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