Specifications

S1C6S2N7 TECHNICAL HARDWARE EPSON I-85
CHAPTER 6: ELECTRICAL CHARACTERISTICS
6.5 Oscillation Characteristics
Oscillation characteristics will vary according to different conditions. Use the
following characteristics are as reference values.
S1C6S2N7
Unless otherwise specified
VDD=0 V, VSS=-3.0 V, Crystal: Q13MC146, CG=25 pF, CD=built-in, Ta=25°C
S1C6SL27/S1C6S2B7
Unless otherwise specified
VDD=0 V, VSS=-1.5 V, Crystal: Q13MC146, CG=25 pF, CD=built-in, Ta=25°C
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacity (drain)
Frequency voltage deviation
Frequency IC deviation
Frequency adjustment range
Higher harmonic oscillation
start voltage
Allowable leak resistance
Symbol
Vsta
(V
SS )
Vstp
(V
SS )
C
D
f/V
f/I
C
f/C G
V hho
(V SS )
R
leak
Condition
t sta≤5sec
t stp≤10sec
Including the parasitic capacity inside the IC
V
SS =-1.8 to -3.6V
C
G =5–25pF
C
G =5pF
Between OSC1 and V
DD , V SS
Min.
-2.2
-2.2
-10
40
200
Typ.
20
Unit
V
V
pF
ppm
ppm
ppm
V
MΩ
Max.
5
10
-3.6
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacity (drain)
Frequency voltage deviation
Frequency IC deviation
Frequency adjustment range
Higher harmonic oscillation
start voltage
Allowable leak resistance
Symbol
Vsta
(V
SS )
Vstp
(V
SS )
C
D
f/V
f/I
C
f/C G
V hho
(V SS )
R
leak
Condition
t sta≤5sec
t stp≤10sec
Including the parasitic capacity inside the IC
V
SS =-1.1 to -3.6V (-0.9)
∗1
C G =5–25pF
C
G =5pF
Between OSC1 and V
DD , V SS
Min.
-1.1
-1.1
(-0.9)
∗1
-10
40
200
Typ.
20
Unit
V
V
pF
ppm
ppm
ppm
V
V
MΩ
Max.
5
10
-1.8
-3.6
S1C6S2L7
S1C6S2B7
∗1 Items enclosed in parentheses ( ) are those used when operating at heavy load
protection mode.