Specifications

S1C62740 TECHNICAL HARDWARE EPSON I-129
CHAPTER 7: ELECTRICAL CHARACTERISTICS
Oscillation Characteristics
The oscillation characteristics change depending on the conditions (components used,
board pattern, etc.). Use the following characteristics as reference values.
OSC1 crystal oscillation circuit
If no special requirement
VDD = 3 V, VSS = 0 V, Crystal: Q13MC146, CG = 25 pF, CD = built-in, Ta = 25°C
7.5
OSC3 CR oscillation circuit
If no special requirement
VDD = 3 V, VSS = 0 V, RCR = 39 kΩ, Ta = 25°C
OSC3 ceramic oscillation circuit
If no special requirement
VDD = 3 V, VSS = 0 V, Ceramic oscillator: 1 MHz, CGC = CDC = 100 pF, Ta = 25°C
Item Symbol Min. Typ. Max. UnitCondition
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
f
OSC3
Vsta
t sta
Vstp
-30
2.2
2.2
(900 kHz) 30
3
%
V
msec
V
V
DD = 2.2 to 5.5 V
Item Symbol Min. Typ. Max. UnitCondition
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Vsta
tsta
Vstp
2.2
2.2
3
V
msec
V
V DD = 2.2 to 5.5 V
Item Symbol Min. Typ. Max. UnitCondition
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Vsta
Vstp
C
D
f/V
f/IC
f/C
G
V hho
R leak
2.2
2.2
-10
35
200
20
45
5
10
7.0
V
V
pF
ppm
ppm
ppm
V
MΩ
t sta ≤ 3 sec
t stp ≤ 10 sec
Including incidental capacitance inside IC
V
DD = 2.2 to 5.5 V
C
G = 5 to 25 pF
C
G = 5 pF
Between OSC1 and V
DD , V SS