Specifications

BIOSEP-BXBS
Page 4-9
50ns: (Faster) Burst Wait State, for 50ns EDO DRAM.
60ns: (Slower) Burst Wait State, for 60ns Fast Page Mode/EDO DRAM.
EDO CASx# MA Wait State: This allows the option to insert an additional wait
state before the assertion of the first CASx# for page hit cycle..
The default is 2.
1: Inserts one wait state.
2: Inserts two wait states.
EDO RASx# Wait State: This allows the option to insert an additional wait state
before RASx# is asserted for row misses.
The default is 2.
1: Inserts one wait state.
2: Inserts two wait states.
SDRAM RAS-to-CAS Delay: This allows the option to insert a timing delay
between the CAS and RAS strobe signals (used when SDRAM is written to, read
from, or refreshed)
The default is 3.
2: Provides faster memory performance.
3: Provides slower memory performance.
SDRAM RAS Precharge Time: The precharge time is the number of cycles it
takes for the RAS to accumulate its charge before SDRAM refresh. If insufficient
time is allowed, refresh may be incomplete and the SDRAM may fail to retain data.
The default is 3.
2: Provides faster memory performance.
3: Provides better memory compatibility.
SDRAM CAS latency Time: This setting defines the CALT timing parameter of
the SDRAM in terms of clocks.
The default is 3.
2: Provides faster memory performance.
3: Provides better memory compatibility.