Datasheet

M2Y2G64CB8HC5N / M2Y2G64CB8HC9N
2GB: 256M x 64
Unbuffered DDR3 SDRAM DIMM
REV 1.1 14
01/2010
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
DDR3-1066
DDR3-1333
Parameter
Symbol
Min
Max
Min
Max
Units
ODT Timings
ODT high time without write command or with write
command and BC4
ODTH4
4
-
4
-
nCK
ODT high time with Write command and BL8
ODTH8
6
-
6
-
nCK
Asynchronous RTT turn-on delay (Power - Down with DLL
frozen)
tAONPD
2
8.5
2
8.5
ns
Asynchronous RTT turn-off delay (Power – Down with DLL
frozen)
tAOFPD
2
8.5
2
8.5
ns
RTT turn-on
tAON
-300
300
-250
250
ps
RTT_Nom and RTT_WR turn-off time from ODTLoff
reference
tAOF
0.3
0.7
0.3
0.7
tCK(avg)
RTT dynamic change skew
tADC
0.3
0.7
0.3
0.7
tCK(avg)
Write Leveling Timings
First DQS/ rising edge after write leveling mode is
programmed
tWLMRD
40
-
40
-
nCK
DQS/DQS delay after write leveling mode is programmed
tWLDQSEN
25
-
25
-
nCK
Write leveling setup time from rising CK,  crossing to
rising DQS,  crossing
tWLS
245
-
195
-
ps
Write leveling setup hold from rising CK,  crossing to
rising DQS,  crossing
tWLH
245
-
195
-
ps
Write leveling output delay
tWLO
0
9
0
9
ns
Write leveling output error
tWLOE
0
2
0
2
ns