Datasheet

M2Y2G64CB8HC5N / M2Y2G64CB8HC9N
2GB: 256M x 64
Unbuffered DDR3 SDRAM DIMM
REV 1.1 11
01/2010
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Speed Bins
Speed Bin
DDR3-1066(-BE)
DDR3-1333 (-CG)
Unit
CL - nRCD - nRP
7-7-7
9-9-9
Parameter
Symbol
Min
Max
Min
Max
Internal read command
to first data
tAA
13.125
20
13.125
20
ns
ACT to internal read or
write delay time
tRCD
13.125
--
13.125
--
ns
PRE command period
tRP
13.125
--
13.125
--
ns
ACT to ACT or REF
command period
tRC
50.625
--
49.125
--
ns
ACT to PRE command
period
tRAS
37.5
9*tREFI
36
9*tREFI
ns
CL = 6
CWL=5
tCK(AVG)
2.5
3.3
2.5
3.3
ns
CWL=6
tCK(AVG)
Reserved
Reserved
ns
CWL=7, 8
tCK(AVG)
Reserved
Reserved
ns
CL = 7
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
1.875
<2.5
ns
CWL=7
tCK(AVG)
Reserved
Reserved
ns
CWL=8
tCK(AVG)
Reserved
Reserved
ns
CL = 8
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
1.875
<2.5
ns
CWL=7
tCK(AVG)
Reserved
Reserved
ns
CWL=8
tCK(AVG)
Reserved
Reserved
ns
CL = 9
CWL=5, 6
tCK(AVG)
Reserved
Reserved
ns
CWL=7
tCK(AVG)
Reserved
1.5
<1.875
ns
CWL=8
tCK(AVG)
Reserved
Reserved
ns
Supported CL settings
6,7,8
6,7,8,9
nCK
Supported CWL Settings
6
6,7
nCK