Datasheet

M2Y2G64CB8HC5N / M2Y2G64CB8HC9N
2GB: 256M x 64
Unbuffered DDR3 SDRAM DIMM
REV 1.1 10
01/2010
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Operating, Standby, and Refresh Currents
T
CASE
= 0 °C ~ 85 °C; V
DDQ
= V
DD
= 1.5V ± 0.075V (2GB, 2 Ranks, base on 128Mx8 DDR3 SDRAMs)
Symbol
Parameter/Condition
DDR3-1066
DDR3-1333
Unit
I DD0
Operating Current: one bank activate/Precharge
1364
1496
mA
I DD1
Operating Current: one bank activate/Read/Precharge
1540
1672
mA
I DD2P(0)
Precharge Power-Down Current Fast Exit-MR0 bit A12=0
211
211
mA
I DD2P(1)
Precharge Power Down Current Slow Exit-MR0 bit A12=1
440
528
mA
I DD2N
Precharge Standby Current
968
1056
mA
I DD2Q
Precharge Quiet Standby current
880
968
mA
I DD3P
Active Power-Down Current Always Fast Exit
528
616
mA
I DD3N
Active Standby Current
968
1056
mA
I DD4W
Operating Current: Burst Write
1892
2288
mA
I DD4R
Operating Current: Burst Read
1892
2200
mA
I DD5B
Burst Refresh Current
2420
2640
mA
I DD6
Self-Refresh Current Normal Temperature Range (0-85C)
176
176
mA
I DD7
All Bank Interleave Read Current
3916
4840
mA