Datasheet

M2S4G64CB88B5N / M2S8G64CB8HB5N
4GB: 512M x 64 / 8GB: 1024M x 64
PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.0 9
06/2012
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Operating, Standby, and Refresh Currents
T
CASE
= 0 °C ~ 85 °C; V
DDQ
= V
DD
= 1.5V ± 0.075V [PC3-10600 (-CG) 4GB / 8GB]
Symbol
Parameter/Condition
4GB
8GB
Unit
IDD0
Operating One Bank Active-Precharge Current
660
1100
mA
IDD1
Operating One Bank Active-Read-Precharge Current
792
1232
mA
IDD2P0
Precharge Power-Down Current Slow Exit
220
440
mA
IDD2P1
Precharge Power-Down Current Fast Exit
308
616
mA
IDD2Q
Precharge Quiet Standby Current
396
792
mA
IDD2N
Precharge Standby Current
440
880
mA
IDD3P
Active Power-Down Current
528
1056
mA
IDD3N
Active Standby Current
528
968
mA
IDD4R
Operating Burst Read Current
1470
1910
mA
IDD4W
Operating Burst Write Current
1496
1936
mA
IDD5B
Burst Refresh Current
1716
2156
mA
IDD6
Self Refresh Current: Normal Temperature Range
220
440
mA
IDD7
Operating Bank Interleave Read Current
2358
2798
mA
Operating, Standby, and Refresh Currents
T
CASE
= 0 °C ~ 85 °C; V
DDQ
= V
DD
= 1.5V ± 0.075V [PC3-12800 (-DI) 4GB / 8GB]
Symbol
Parameter/Condition
4GB
8GB
Unit
IDD0
Operating One Bank Active-Precharge Current
704
1144
mA
IDD1
Operating One Bank Active-Read-Precharge Current
880
1320
mA
IDD2P0
Precharge Power-Down Current Slow Exit
220
440
mA
IDD2P1
Precharge Power-Down Current Fast Exit
352
704
mA
IDD2Q
Precharge Quiet Standby Current
440
880
mA
IDD2N
Precharge Standby Current
440
880
mA
IDD3P
Active Power-Down Current
528
1056
mA
IDD3N
Active Standby Current
546
986
mA
IDD4R
Operating Burst Read Current
1646
2086
mA
IDD4W
Operating Burst Write Current
1698
2138
mA
IDD5B
Burst Refresh Current
1786
2226
mA
IDD6
Self Refresh Current: Normal Temperature Range
220
440
mA
IDD7
Operating Bank Interleave Read Current
2464
2904
mA