Datasheet

M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B
1GB: 128M x 64 / 2GB: 256M x 64
PC2-5300 / PC2-6400
Unbuffered DDR2 SO-DIMM
REV 1.0 12
07/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
ODT DC Electrical Characteristics
Parameter/Condition
Symbol
Min.
Nom.
Max.
Units
Note
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75ohm
Rtt1(eff)
60
75
90
ohm
1
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150ohm
Rtt2(eff)
120
150
180
ohm
1
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50ohm
Rtt3(eff)
40
50
60
ohm
1
Deviation of V
M
with respect to VDDQ/2
Delta VM
-6
+6
%
1
Note1: Test condition for Rtt measurements.
`
Input AC/DC logic level
Symbol
Parameter
PC2-5300
PC2-6400
Units
Min.
Max.
Min.
Max.
VIH (AC)
Input High (Logic1) Voltage
VREF + 0.200
-
VREF + 0.200
-
V
VIL (AC)
Input Low (Logic0) Voltage
-
VREF – 0.200
-
VREF – 0.200
V
VIH (DC)
Input High (Logic1) Voltage
VREF + 0.125
VDDQ + 0.3
VREF + 0.125
VDDQ + 0.3
V
VIL (DC)
Input Low (Logic0) Voltage
-0.3
VREF – 0.125
-0.3
VREF – 0.125
V