Datasheet
M2F1G64CBH4B5P/ M2F1G64CBH4B9P
M2F(X)2G64CB88B7N / M2F(X)2G64CB88BHN
M2F(X)4G64CB8HB5N / M2F(X)4G64CB8HB9N
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SDRAM DIMM
REV 1.0 11
05/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Intel Extreme Memory Profile definition
Serial Presence Detect [M2X2G64CB88B7N / M2X2G64CB88BHN , 2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
Byte
Description
Serial PD Data Entry (Hex.)
Note
-BE
-CG
-DG
176-177
Intel Extreme Memory Profile ID String
--
--
OC4A
178
Intel Extreme Memory Profile Organization Type
--
--
07
179
Intel Extreme Memory Profile Revision
--
--
12
180
Medium Timebase Dividend for Profile 1
--
--
01
1
181
Medium Timebase Divisor for Profile 1
--
--
08
1
182
Medium Timebase Dividend for Profile 2
--
--
01
1
183
Medium Timebase Divisor for Profile 2
--
--
0E
1
184
RSVD 1
--
--
00
1
185
Module VDD Voltage Level for Profile 1 (Certified Settings)
--
--
2D
1
186
SDRAM Minimum Cycle Time (tCKmin)
--
--
0A
2,4
187
Minimum CAS Latency Time (tAAmin)
--
--
5A
2,4
188
CAS Latencies Supported, Least Significant Byte (CL MASK)
--
--
24
2,4
189
CAS Latencies Supported, Most Significant Byte (CL MASK)
--
--
00
2,4
190
Minimum CAS Write Latency Time (tCWLmin)
--
--
5A
2
191
Minimum Row Precharge Time (tRPmin)
--
--
5A
2,4
192
Minimum RAS# to CAS# Delay Time (tRCDmin)
--
--
5A
2,4
193
Minimum Write Recovery Time (tWRmin)
--
--
78
2,4
194
Upper Nibbles for tRAS and tRC
--
--
11
2,4
195
Minimum Active to Precharge Time (tRASmin), Least Significant Byte
--
--
18
2,4
196
Minimum Active to Active/Refresh Time (tRCmin), Least Significant Byte
--
--
72
2,4
197
Maximum tREFI Time (Average Periodic Refresh Interval) – LSB
--
--
20
2
198
Maximum tREFI Time (Average Periodic Refresh Interval) - MSB
--
--
00
2
199
Minimum Refresh Recovery Time (tRFCmin), Least Significant Byte
--
--
00
2,4
200
Minimum Refresh Recovery Time (tRFCmin), Most Significant Byte
--
--
05
2,4
201
Minimum Internal Read to Precharge Command Delay Time (tRTPmin)
--
--
3C
2,4
202
Minimum Row Active to Row Active Delay Time (tRRDmin)
--
--
30
2,4
203
Upper Nibble for tFAW
--
--
00
2,4
204
Minimum Four Activate Window Delay Time (tFAWmin)
--
--
F0
2,4
205
Minimum Internal Write to Read Command Delay Time (tWTRmin)
--
--
3C
2,4
206
Write to Read & Read to Write CMD Turn-around Time Pull-in
--
--
00
2
207
Back to Back CMD Turn-around Time Pull-in
--
--
00
2
208
System ADD/CMD Rate (1N or 2N mode)
--
--
10
2
209
Auto Self Refresh Performance (Sub 1x Refresh and IDD6 Impacts)
--
--
00
2
210
Memory Controller Voltage Level for Profile 1
--
--
2D
2
211-218
RSVD
--
--
--
2
219
Vendor Personality Byte for Profile 1 - RSVD
--
--
00
3,4
220
Module VDD Voltage Level for Profile 2 (Extreme Settings)
--
--
2D
3,4
221
SDRAM Minimum Cycle Time (tCKmin)
--
--
0F
3,4
222
Minimum CAS Latency Time (tAAmin)
--
--
A5
3,4
223
CAS Latencies Supported, Least Significant Byte (CL MASK)
--
--
84
3,4
224
CAS Latencies Supported, Most Significant Byte (CL MASK)
--
--
00
3
225
Minimum CAS Write Latency Time (tCWLmin)
--
--
A5
3,4
226
Minimum Row Precharge Time (tRPmin)
--
--
A5
3,4
227
Minimum RAS# to CAS# Delay Time (tRCDmin)
--
--
A5
3,4
228
Minimum Write Recovery Time (tWRmin)
--
--
D2
3,4
229
Upper Nibbles for tRAS and tRC
--
--
21
3,4
230
Minimum Active to Precharge Time (tRASmin), Least Significant Byte
--
--
EA
3,4
231
Minimum Active to Active/Refresh Time (tRCmin), Least Significant Byte
--
--
8F
3
232
Maximum tREFI Time (Average Periodic Refresh Interval) - LSB
--
--
37
3
233
Maximum tREFI Time (Average Periodic Refresh Interval) - MSB
--
--
00
3,4
234
Minimum Refresh Recovery Time (tRFCmin), Least Significant Byte
--
--
C0
3,4
235
Minimum Refresh Recovery Time (tRFCmin), Most Significant Byte
--
--
08
3,4
236
Minimum Internal Read to Precharge Command Delay Time (tRTPmin)
--
--
69
3,4
237
Minimum Row Active to Row Active Delay Time (tRRDmin)
--
--
54
3,4
238
Upper Nibble for tFAW
--
--
01
3,4
239
Minimum Four Activate Window Delay Time (tFAWmin)
--
--
A4
3,4
240
Minimum Internal Write to Read Command Delay Time (tWTRmin)
--
--
69
3
241
Write to Read & Read to Write CMD Turn-around Time Pull-in
--
--
00
3
242
Back to Back CMD Turn-around Time Pull-in
--
--
00
3
243
System ADD/CMD Rate (1N or 2N mode)
--
--
1C
3
244
Auto Self Refresh Performance (Sub 1x Refresh and IDD6 Impacts)
--
--
00
3
245
Memory Controller Voltage Level for Profile
--
--
2D
3
246-253
RSVD
--
--
--
3
254
Vendor Personality Byte for Profile 2 - RSVD
--
--
--
3
1. Global Parameters used across all profiles
2. Utilized for Profile 1 (Enthusiast / Certified Settings)
3. Utilized for Profile 2 (Extreme Settings)
4. Parameter utilized in the same fashion as the standard DDR3 SPD byte with the exception that it may exceed the DDRx SDRAM datasheet