Data Sheet

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IRF3205S

IRF3205L

HEXFET

Power MOSFET

09/06/02

Thermal Resistance

www.irf.com 1

DSS

= 55V

DS(on)

= 8.0mΩ

= 110A



Advanced HEXFET

Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D

Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest power

capability and the lowest possible on-resistance in any existing surface

mount package. The D

Pak is suitable for high current applications

because of its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF3205L) is available for low-profile

applications.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description

Pak

IRF3205S

TO-262

IRF3205L

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.75 °C/W

θJA

Junction-to-Ambient (PCB mounted, steady-state)* ––– 40

Absolute Maximum Ratings

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 110 

@ T

= 100°C Continuous Drain Current, V

@ 10V 80 A

Pulsed Drain Current  390

= 25°C Power Dissipation 200 W

Linear Derating Factor 1.3 W/°C

Gate-to-Source Voltage ± 20 V

Avalanche Current 62 A

Repetitive Avalanche Energy 20 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

PD - 94149A

Summary of content (11 pages)

PAGE 1
PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ G ID = 110A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
PAGE 2
IRF3205S/IRF3205L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRF3205S/IRF3205L 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 4.5V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 20µs PULSE WIDTH TJ = 175 °C 1 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2.
PAGE 4
IRF3205S/IRF3205L VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 5000 C, Capacitance(pF) Coss = Cds + Cgd 4000 Ciss 3000 2000 Coss 1000 Crss 16 VGS , Gate-to-Source Voltage (V) 6000 0 10 V DS= 44V V DS= 27V V DS= 11V 14 12 10 8 6 4 2 0 1 ID = 62A 100 0 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 60 80 100 120 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRF3205S/IRF3205L LIMITED BY PACKAGE VGS 100 ID , Drain Current (A) RD V DS 120 D.U.T. RG + V DD - 80 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 Fig 10a. Switching Time Test Circuit 40 VDS 90% 20 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 0.02 0.01 0.01 0.
PAGE 6
15V L VDS DRIVER D.U.T RG + - VDD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRF3205S/IRF3205L 500 ID 25A 44A BOTTOM 62A TOP 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T.
PAGE 7
IRF3205S/IRF3205L Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T + - - + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF3205S/IRF3205L D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS SEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE 8 PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.
PAGE 9
IRF3205S/IRF3205L TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE www.irf.
PAGE 10
IRF3205S/IRF3205L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1.
PAGE 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.