Specifications

46 GL-S MirrorBit
®
Family IS29GL_128S_01GS_00_Rev.A February 2015
Data Sheet
5.6 Embedded Algorithm Performance Table
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25°C, 3.0V V
CC
, 10,000 cycle, and a random data pattern.
3. Under worst case conditions of 90°C, V
CC
= 2.70V, 100,000 cycles, and a random data pattern.
4. Effective write buffer specification is based upon a 512-byte write buffer operation.
5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 0000h before Sector and Chip erasure.
6. System-level overhead is the time required to execute the bus-cycle sequence for the program command. See Table 6.1, Command
Definitions on page 57 for further information on command definitions.
Table 5.4 Embedded Algorithm Characteristics (-40°C to +85°C)
Parameter Typ (Note 2) Max (Note 3) Unit Comments
Sector Erase Time 128 kbyte 275 1100 ms
Includes pre-programming prior
to erasure (Note 5)
Single Word Programming Time (Note 1) 125 400 µs
Buffer Programming Time
2-byte (Note 1) 125 750
µs
32-byte (Note 1) 160 750
64-byte (Note 1) 175 750
128-byte (Note 1) 198 750
256-byte (Note 1) 239 750
512-byte 340 750
Effective Write Buffer Program
Operation per Word
512-byte 1.33 µs
Sector Programming Time 128 kB (full Buffer
Programming)
108 192 ms (Note 6)
Erase Suspend/Erase Resume (t
ESL
) 40µs
Program Suspend/Program Resume (t
PSL
) 40µs
Erase Resume to next Erase Suspend (t
ERS
) 100 µs
Minimum of 60 ns but  typical
periods are needed for Erase to
progress to completion.
Program Resume to next Program Suspend (t
PRS
) 100 µs
Minimum of 60 ns but  typical
periods are needed for Program
to progress to completion.
Blank Check 6.2 8.5 ms
NOP (Number of Program-operations, per Line) 256