Specifications

Publication Number IS29GL_128S_01GS_00 Revision A Issue Date February 2015
General Description
The ISSI IS29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These
devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature
a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective
programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications
that require higher density, better performance and lower power consumption.
Distinctive Characteristics
 65 nm MirrorBit Eclipse Technology
 Single supply (V
CC
) for read / program / erase (2.7V to 3.6V)
 Versatile I/O Feature
– Wide I/O voltage range (V
IO
): 1.65V to V
CC
 x16 data bus
 Asynchronous 32-byte Page read
 512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of 512 bytes
 Single word and multiple program on same word options
 Sector Erase
– Uniform 128-kbyte sectors
 Suspend and Resume commands for Program and Erase
operations
 Status Register, Data Polling, and Ready/Busy pin methods
to determine device status
 Advanced Sector Protection (ASP)
– Volatile and non-volatile protection methods for each sector
 Separate 1024-byte One Time Program (OTP) array with two
lockable regions
 Common Flash Interface (CFI) parameter table
 Temperature Range
– Industrial (-40°C to +85°C)
– In-Cabin (-40°C to +105°C)
 100,000 erase cycles for any sector typical
 20-year data retention typical
 Packaging Options
– 56-pin TSOP
– 64-ball LAA Fortified BGA, 13 mm x 11 mm
– 64-ball LAE Fortified BGA, 9 mm x 9 mm
– 56-ball VBU Fortified BGA, 9 mm x 7 mm
GL-S MirrorBit
®
Eclipse
™
Flash
Non-Volatile Memory Family
IS29GL01GS 1 Gbit (128 Mbyte)
IS29GL512S 512 Mbit (64 Mbyte)
IS29GL256S 256 Mbit (32 Mbyte)
IS29GL128S 128 Mbit (16 Mbyte)
CMOS 3.0 Volt Core with Versatile I/O
Data Sheet