Data Sheet

8
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HTE501
4 Electrical Characteristics
4.1 Absolute Maximum Ratings
The absolute maximum ratings as given in Table 5 are stress ratings only and give additional information.
Functional operation of the device at these conditions is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect the device reliability (e.g. hot carrier degradation, oxide
breakdown).
1) Human Body Model according to AEC-Q100-002
2) Charged Device Model according to AEC-Q100-011
PARAMETER SYMBOL MIN MAX UNIT
Power Supply V
DD
-0.3 3.6 V
Digital I/O pins V
LOGIC
-0.3 5.0 V
Input Current on any pin I
IN
-50 50 mA
Storage Temperature T
STG
-55 150 °C
ESD HBM
1)
ESD
HBM
- 4 kV
ESD CDM
2)
ESD
CDM
- 750 V
Table 5: HTE501 absolute maximum ratings
4.2 Electrical Specification
Typical values correspond to V
DD
= 3.3 V and T
A
= 25 °C.
Min. and max. values are valid in the full temperature range -40 °C … 135 °C and at declared V
DD
levels,
unless otherwise noted.
PARAMETER SYMBOL CONDITION / COMMENT MIN TYP MAX UNIT
Supply Voltage V
DD
2.35 3.0 3.6 V
POR voltage
periodic mode
V
PORP
Static power supply 2.10 2.20 2.35 V
POR voltage
idle mode
V
PORI
Static power supply 1.8 V
Supply current I
DD
Single mode (idle)
1)
6 µA
Periodic mode
1)
80 µA
Measuring T, RH, Calculation 900 µA
Constant current heater,
adjustable
2)
5…80 mA
Thermal resistance R
TH
Dependent on PCB layout
and enviromental conditions
150 K/W
1) Without I
2
C communication and when not measuring
2) The chip temperature must not exceed 135°C with heater on. For example V
DD
= 3.3 V, heater current = 80 mA  P
HEAT
= 0.264 W
 Overtemperature ~40 °C (R
TH
~ 150 K/W)  Ambient temperature < 95 °C  check the measured temperature while constant current heater is on.
Table 6:
General operation