Datasheet

Technical Data
TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO) 100.0 V
Voltage, Collector to Emitter (VCE) 60.0 V
Voltage, Emitter to Base (VEBO) 7.0 V
Collector Current (IC) 1.0 A
Base Current (IB) 0.2 A
Max. Power Dissipation (PT) at TC = 25 °C 5.0 W
Max. Thermal Resistance (Rth J-C) 35.0 °C/W
Max. Junction Temperature (TJ) 200.0 °C
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NO. BSX46-16
TYPE NPN
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CASE TO-39
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PERFORMANCE CHARACTERISTICS at T
C
= 25°C, unless otherwise noted
NO. SYMBOL CONDITIONS MIN. MAX. UNITS
1. BVCEO IC = 50.0 mA (1) 60.0 - V
2. BVCES ICE = 100.0 µA 100.0 - V
3. BVEBO IEB = 100.0 µA 7.0 - V
4. ICES VCE = 60.0 V - 30.0 nA
5. ICES VCE = 60.0 V, TA = 150.0 °C - 10.0 µA
6. IEBO VEB = 5.0 V - 10.0 nA
7. hFE IC = 0.1 mA, VCE = 1.0 V (1) 25.0 - -
8. hFE IC = 100.0 mA, VCE = 1.0 V (1) 100.0 250.0 -
9. hFE IC = 500.0 mA, VCE = 1.0 V (1) 35.0 - -
10. hFE IC = 1.0 A, VCE = 1.0 V (2) 30.0 - -
11. VCE(SAT) IC = 1.0 A, IB = 100.0 mA (1) - 1.0 V
12. VBE(ON) IC = 500.0 mA, VCE = 1.0 V - 1.5 V
13. fT IC = 50.0 mA, VCE = 10.0 V, f = 20.0 MHz 50.0 - MHz
14. Cobo VCE = 10.0 V, f = 1.0 MHz - 20.0 pF
15. tON IC = 100.0 mA, IB = 5.0 mA - 200.0 ns
16. tOFF IC = 100.0 mA, IB = 5.0 mA - 850.0 ns
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Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 %
(2)typ. value / pulse-tested tp≤300µs, duty cycle ≤2%
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DIMENSIONS
in mm
Marking
BSX46-16
Customer
GENERAL PURPOSE