Datasheet

Technical Data
TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO) 45.0 V
Voltage, Collector to Emitter (VCE) 45.0 V
Voltage, Emitter to Base (VEBO) 5.0 V
Collector Current (IC) 0.2 A
Base Current (IB) 0.02 A
Max. Power Dissipation (PT) at TC = 45 °C 1.0 W
Max. Thermal Resistance (Rth J-C) 150.0 °C/W
Max. Junction Temperature (TJ) 200.0 °C
empty empty empty
NO. BCY79-8
TYPE PNP
empty empty
empty empty
CASE TO-18
empty empty
empty empty
PERFORMANCE CHARACTERISTICS at T
C
= 25°C, unless otherwise noted
NO. SYMBOL CONDITIONS MIN. MAX. UNITS
1. BVCEO IC = 2.0 mA (1) 45.0 - V
2. BVEBO IE = 1.0 µA 5.0 - V
3. ICES VCE = 35.0 V - 20.0 nA
4. ICES VCE = 35.0 V, TJ = 150.0° C - 10.0 µA
5. IEBO VEB = 4.0 V - 20.0 nA
6. hFE IC = 10.0 µA, VCE = 5.0 V (2) 30.0 - -
7. hFE IC = 2.0 mA, VCE = 5.0 V (1) 180.0 310.0 -
8. hFE IC = 10.0 mA, VCE = 1.0 V (1) 120.0 400.0 -
9. hFE IC = 100.0 mA, VCE = 1.0 V (1) 45.0 - -
10. VCE(SAT) IC = 10.0 mA, IB = 0.25 mA (1) - 0.25 V
11. VCE(SAT) IC = 100.0 mA, IB = 2.5 mA (1) - 0.8 V
12. VBE(SAT) IC = 10.0 mA, IB = 0.25 mA (1) - 0.85 V
13. VBE(SAT) IC = 100.0 mA, IB = 2.5 mA (1) - 1.2 V
14. fT IC = 10.0 mA, VCE = 5.0 V, f = 100.0 MHz (3) 180.0 - MHz
15. Cobo VCB = 10.0 V - 7.0 pF
16. NF IC = 0.2 mA, VCE = 5.0 V, f = 1.0 kHz - 6.0 dB
17.
18.
19.
20.
Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 %
(2)typ. value / pulse-tested tp≤300µs, duty cycle ≤2%
(3)typical value
empty
DIMENSIONS
in mm
Marking
BCY79-8
Customer
GENERAL PURPOSE