Specifications

TPS1H100-Q1
SLVSCM2A –OCTOBER 2014–REVISED JANUARY 2014 www.ti.com
7.5 Electrical Characteristics
5 V < V
S
< 40 V; –40°C < T
J
< 150°C unless otherwise specified
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OPERATING VOLTAGE
V
S,nom
Nominal operating voltage 5 40 V
R
DS-ON
value increases maximum 20%,
V
S,op
Extended operating voltage 3.5 5 V
compared to 5 V, see R
DS-ON
parameter
V
S,UVR
Undervoltage restart V
S
rises up, V
S
> V
S,UVR
, device turn on 3.5 3.7 4 V
V
S,UVF
Undervoltage shutdown V
S
falls down, V
S
< V
S,uvf
, device shuts off 3 3.2 3.5 V
V
UV,hys
Undervoltage shutdown, hysteresis 0.5 V
OPERATING CURRENT
V
IN
= 5 V, V
DIAG_EN
= 0 V, no load 5 mA
I
nom
Nominal operating current
V
IN
= 5 V, V
DIAG_EN
= 0 V, 10-Ω load 10 mA
V
S
= 13.5 V, V
IN
= V
DIAG_EN
= V
CS
= V
CL
=
0.5 µA
V
OUTPUT
= 0 V, T
J
= 25°C
I
off
Standby current
V
S
= 13.5V, V
IN
= V
DIAG_EN
= V
CS
= V
CL
=
5 µA
V
OUTPUT
= 0 V, T
J
= 125°C
I
off,diag
Standby current with diagnostic enabled V
IN
= 0 V, V
DIAG_EN
= 5 V 1.2 mA
IN from high to low, if deglitch time > t
off,deg
,
t
off,deg
Standby mode deglitch time
(1)
2 ms
enters into standby mode.
V
S
= 13.5 V, V
IN
= V
OUTPUT
= 0, T
J
= 25°C 0.5 µA
I
leak,out
Off-state output leakage current
V
S
= 13.5 V, V
IN
= V
OUTPUT
= 0, T
J
= 125°C 3 µA
POWER STAGE
V
S
> 5 V, T
J
= 25°C 80 100 mΩ
R
DS-ON
On-state resistance V
S
> 5 V, T
J
= 150°C 166 mΩ
V
S
= 3.5 V, T
J
= 25°C 120 mΩ
I
lim,nom
Internal current limit 7 13 A
Internal current limit, thermal cycling condition 5 A
External current limit, thermal cycling
Il
im,tsd
Current limit during thermal shutdown
condition; Percentage of current limit set 50%
value
Clamp drain-to-source voltage internally
V
DS
50 70 V
clamped
OUTPUT DIODE CHARACTERISTICS
V
F
Drain-to-source diode voltage V
IN
= 0, I
OUT
= −0.2 A 0.7 V
t < 60 s, V
S
= 13.5 V, GND pin 1-kΩ resistor
Continuous reverse current when
I
rev1
in parallel with diode. T
J
= 25°C. See I
rev1
test 4 A
reverse polarity
(2)
condition (Figure 6).
Continuous reverse current when t < 60 s, V
S
= 13.5 V. T
J
= 25°C. See I
rev2
I
rev2
2 A
V
OUT
> V
S
+ V
diode
(2)
test condition (Figure 7).
LOGIC INPUT (IN AND DIAG_EN)
V
logic,h
Input/Diag_En high level voltage 2 V
V
logic,l
Input/Diag_En low level voltage 0.8 V
V
logic,hys
Input/Diag_En Hysteresis voltage 250 mV
R
pd,in
Input pulldown resistor 500 kΩ
R
pd,diag
Diag pulldown resistor 150 kΩ
(1) Value is specified by design, not subject to production test.
(2) Value are based on the minimum value of the 10 pcs/3 lots samples.
6 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TPS1H100-Q1