Specifications

Gate drive

and Clamp

Logic and

Protection

Current Sense/

Current Limit

CURRENT

LIMIT

Version B

SOURCE

DRAIN

Output

Clamp

DIAG_EN

GND

Dgnd

Rgnd

(Floating)

Load

STATUS

Version A

MCU

VBAT

TPS1H100-Q1

SLVSCM2A –OCTOBER 2014–REVISED JANUARY 2014

www.ti.com

However, an inductive load is not acceptable to avoid an abnormal status when switching off.

• Type 3 (resistor and diode in parallel (recommended)): A peak negative spike may occur when the

inductive load is switching off, which may damage the HSD or the diode. So, TI recommends a resistor in

parallel with the diode when driving an inductive load. The recommended selection are 1-kΩ resistor in

parallel with an I

> 100-mA diode. If multiple high-side switches are used, the resistor and diode can be

shared among devices.

8.3.4.10 MCU IOs Protection

In many conditions, such as the negative ISO pulse, or the loss of battery when inductive load, a negative

potential on the IC GND pin may damage the MCU’s I/O pins. Therefore, the serial resistors between MCU and

HSD are required.

Also, for the proper protection of loss of GND, TI recommends 4.7 kΩ when using 3.3-V MCU I/Os; 10 kΩ is for

5-V applications.

Figure 43. MCU IO Protections

8.3.5 Diagnostic Enable Function

The diagnostic enable pin, DIAG_EN, offers multiplexing of the microcontroller diagnostic input for current sense

or digital status, by sharing the same sense resistor and ADC line or I/O port among multiple devices.

Product Folder Links: TPS1H100-Q1