Sample & Buy Product Folder Support & Community Tools & Software Technical Documents TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 TPS1H100-Q1 40-V, 100-mΩ Single-Channel Smart High-Side Power Switch 1 Features • • 1 • • • • • • • • • • • Qualified for Automotive Applications AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H3A – Device CDM ESD Classification Level C4B S
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Typical Application Schematic............................. Revision History..................................................... Pin Configuration and Functions .......................
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 6 Pin Configuration and Functions HTSSOP 14 Pins (Top View) 180 180 14 CS 2 13 CL IN 3 12 DIAG_EN NC NC 4 11 NC 10 VS OUT 5 10 VS 6 9 VS OUT 6 9 VS 7 8 VS OUT 7 8 VS ST NC 1 13 CL GND 12 DIAG_EN 11 5 OUT OUT NC 1 GND 2 IN 3 NC 4 OUT 14 Ver A Tab Ver B Tab Pin Functions PIN NAME NO.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com VS IS IN IIN ST IST DIAG_EN CL CS ICS Vout ICL GND IGND VCS VCL VDIAG VST VIN IOUT Vs OUT IDIAG Figure 1. Pin Current and Voltage Conventions 7 Specifications 7.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM) AEC-Q100 Classification Level H3A (1) VS, OUT, GND ±5000 Human body model (HBM) AEC-Q100 Classification Level H2 (1) Other pins ±4000 Charged device model (CDM), per AEC Q100-011 (2) UNIT V ±750 The human-body model is a 107-pF capacitor discharged through a 1.5-kΩ resistor into each terminal.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com 7.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 Electrical Characteristics (continued) 5 V < VS < 40 V; –40°C < TJ < 150°C unless otherwise specified PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 100 µA 2.6 V –50 µA DIAGNOSTICS Iloss,gnd Loss of ground output leakage current Vol,off Open load detection threshold in off state VIN = 0 V, When VS – VOUT < Vol,off, duration longer than tol,off. Open load detected.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com 7.6 Timing Requirements – Current Sense Characteristics (1) MIN NOM MAX UNIT tCS,off1 CS settling time from DIAG disabled VIN = 5 V, Iload ≥ 5 mA. VDIAG_EN from 5 to 0 V. CS to 10% of sense value. 10 µs tCS,on1 CS settling time from DIAG enabled VIN = 5 V, Iload ≥ 5 mA. VDIAG_EN from 0 to 5 V. CS to 90% of sense value. 10 µs tCS,off2 CS settling time from IN falling edge VDIAG_EN = 5 V, Iload ≥ 5 mA. IN from 5 to 0 V.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 7.7 Switching Characteristics VS = 13.5 V, Rload = 10 Ω, over operating free-air temperature range (unless otherwise noted) (1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td,ON Turn-on delay time IN rising edge to VOUT = 10%, DIAG_EN high 20 50 td,OFF Turn-off delay time IN falling edge to VOUT = 90%, DIAG_EN high 20 50 µs dV/dtON Slew rate on VOUT = 10% to 90%, DIAG_EN high 0.1 0.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com IN STATUS Version A DRAIN Output Clamp Gate drive and Clamp Logic and Protection DIAG_EN SOURCE CS Version B Current Sense/ Current Limit Load NC (Floating) CURRENT LIMIT GND Rgnd VBAT Dgnd GND Network Figure 6.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 7.8 Typical Characteristics All the below data are based on the mean value of the three lots samples, VS = 13.5 V if not specified. 4 10 Vs,uvr Vs,uvf Inom(no load) Inom(10-O load) 8 Current (mA) Voltage (V) 3.8 3.6 3.4 3.2 3 -40 6 4 2 -15 10 35 60 Temperature (°C) 85 0 -40 110 125 Figure 8. VS,UVR and VS,UVF Ioff Ileak,out 85 110 125 D002 1 Current (mA) Current (µA) 35 60 Temperature (°C) 1.2 0.2 0.15 0.1 0.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com Typical Characteristics (continued) All the below data are based on the mean value of the three lots samples, VS = 13.5 V if not specified. 65 130 Resistance (mO) 115 Voltage (V) 60 55 Rdson_VS_3P5V Rdson_VS_5V Rdson_VS_13P5 Rdson_VS_40V 100 85 70 50 -40 -15 10 35 60 Temperature (°C) 85 55 -40 110 125 -15 10 D007 Figure 14. VDS, clamp 35 60 Temperature (°C) 85 110 125 D008 Figure 15.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 Typical Characteristics (continued) All the below data are based on the mean value of the three lots samples, VS = 13.5 V if not specified. 9 1.95 1.9 Current (mA) Voltage (V) 8 1.85 1.8 7 6 1.75 1.7 -40 -15 10 35 60 Temperature (°C) 85 110 125 5 -40 -15 D013 Figure 20. Vol,off 10 35 60 Temperature (°C) 85 110 125 D014 Figure 21.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com Typical Characteristics (continued) All the below data are based on the mean value of the three lots samples, VS = 13.5 V if not specified. 10% 10% 8% 8% 6% 6% 4% 4% 2% 2% 0 0 -2% -2% -4% -4% -6% -6% -8% -8% -10% -40 -10 20 50 Temperature (°C) 80 110 125 -10% -40 -10 D018 Figure 26. KCS = 1 A, 13.5 V 20 50 Temperature (°C) 80 110 125 D020 Figure 27. KCL = 0.5 A, 13.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 8 Detailed Description 8.1 Overview The TPS1H100-Q1 is a high-side power switch that is fully protected and single channel, with integrated NMOS power FET and charge pump. Full diagnostics and high-accuracy current sense features enable intelligent control of the load. Programmable current limit function greatly improves the whole system’s reliability.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com 8.2 Functional Block Diagram DRAIN (VS) Internal LDO Charge Pump VDS Clamp Internal Reference IN Gate Driver DIAG_EN ST Diagnostics and Protection Open Load Detection Current Limit CL Thermal Monitor Current Sense SOURCE(OUT) CS GND 8.3 Feature Description 8.3.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 Feature Description (continued) 4A 1A 100 mA 50 mA 25 mA 5 mA dK/K = ±3% dK/K = ±5% dK/K = ±7% dK/K = ±10% dK/K = ±80% 0A Figure 29. Current Sense Accuracy Ensure the CS voltage is in the linear region (0 to 4 V) during normal operation. Calculate the RCS with Equation 1. VCS VCS u K RCS ICS Iout (1) Also, when a fault condition happens, CS works as a diagnostics report pin.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com Feature Description (continued) Current Sense Voltage Vcs,H ADC Full Scale Range Max Normal Operating Current Operating Range Open Load Current On-state: open load/short to battery Normal Over current On-state: Current limit, thermal fault Off-state: Open load/ short to battery Figure 30.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 Feature Description (continued) current applications, the CL pin should be tied directly to the device GND. Both internal current limit (Ilim,nom) and external programmable current limit are always active when VS is powered and IN is high level. The smaller one (of Ilim,nom and external programmable current limit) is applied as the actual current limit.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com Feature Description (continued) VBAT DRAIN IN - L + R R SOURCE GND Figure 32. Driving Inductive Load INPUT VBAT VOUT VDS, clamp EHSD IOUT tDECAY Figure 33. Inductive Load Switching Off Diagram As discussed previously, when switching off, battery energy and load energy are dissipated on the high-side power switch, which leads to the large thermal variation.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 Feature Description (continued) 12 TA = 25°C TA = 125°C 11 Maximum Current (A) 10 9 8 7 6 5 4 3 2 1 0 0.1 0.2 0.5 1 2 3 4 5 7 10 20 30 50 100 200 400 Inductance Range (mH) D026 Figure 34. Maximum Current vs Inductance Range 8.3.4 Full Protections and Diagnostics Table 1 is when DIAG_EN enabled. When DIAG_EN is low, current sense or ST is disabled accordingly. The output is in high-impedance mode. Refer to Table 2 for details.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com 8.3.4.1 Short to GND/Overload Detection In the on state, the short to GND fault is reported as the low status output or VCS,h on CS, when current limit is triggered. The smaller one of the internal or external set value is applied for the actual current limit. It is in autorecovery when the fault condition is cleared. If not cleared, thermal shutdown triggers to protect the power FET. 8.3.4.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 VBAT VS OPEN LOAD Vol,off ST/CS FAULT Rpu OUT Figure 36. Open Load Detection Circuit 8.3.4.3 Short to Battery Detection Short to battery has the same detection mechanism and behavior as open load both in the on-state and off-state. Refer to the fault truth table, Table 1, for more details. In the on-state, the reverse current flows through the FET instead of the body diode, leading to less power dissipation.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com In TSD TSD Thys Thys TSD,r TSD,rst st Thys Tsw Junction Temperature Ilim 1/2Ilim Output Current Vcs,H VCS ST Figure 37. Thermal Behavior 8.3.4.6 UVLO Protection The device monitors the supply voltage VS to prevent unpredicted behaviors in the event that the supply voltage is too low. When the supply voltage falls down to VS,UVF, the output stage is shut down automatically.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 8.3.4.7 Loss of GND Protection When loss of GND happens, output is turned off regardless of whether the input signal is high or low. Case 1 (loss of device GND): Loss of GND protection is active when the Tab, IC_GND, and current limit GND are one trace connected to the board GND, as shown in Figure 38. Tab floating is also a choice.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com Case 2 (loss of module GND): When the whole ECU module GND is lost, protections are also active. At this condition, the load GND remains connected. VBAT IN Gate drive and Clamp 5V STATUS Version A MCU Output Clamp Logic and Protection DIAG_EN CS Version B DRAIN SOURCE Current Sense/ Current Limit NC Load (Floating) CURRENT LIMIT Tab GND Figure 39.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 8.3.4.8 Loss of Power Supply Protection When loss of supply happens, output is turned off regardless of whether the input is high or low. For a resistive or capacitive load, loss of supply protection is easy to achieve due to no more power. The worst case is a charged inductive load. In this case, the current is driven from all of the IOs to maintain the inductance output loop.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com 8.3.4.9 Reverse Current Protection Method 1: Block diode connected with VS. Both the IC and load are protected when in reverse polarity. VBAT IN Gate drive and Clamp STATUS Version A Output Clamp DRAIN Logic and Protection DIAG_EN SOURCE CS Version B Current Sense/ Current Limit Load NC (Floating) CURRENT LIMIT GND Figure 41.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 Method 2 (GND network protection): Only the high-side device is protected under this connection. The load reverse loop is limited by the load itself. Note when reverse polarity happens, the continuous reverse current through the power FET should be less than Irev. Of the three types of ground pin networks, TI strongly recommends type 3 (the resistor and diode in parallel).
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 • www.ti.com However, an inductive load is not acceptable to avoid an abnormal status when switching off. Type 3 (resistor and diode in parallel (recommended)): A peak negative spike may occur when the inductive load is switching off, which may damage the HSD or the diode. So, TI recommends a resistor in parallel with the diode when driving an inductive load. The recommended selection are 1-kΩ resistor in parallel with an IF > 100-mA diode.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 In addition, during the output off period, diagnostic disable function lowers the current consumption for the standby condition. The three working modes in the device are normal mode, standby mode, and standby mode with diagnostic. If an off-state power saving is required in the system, the standby current is <500 nA with DIAG_EN low.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 Typical Application (continued) 9.2.1 Design Requirements • VS range from 9 to 16 V • Nominal current of 2 A • Current sense for fault monitoring • Expected current limit value of 5 A • Full diagnostic with 5-V MCU • Reverse protection with GND network 9.2.2 Detailed Design Procedure The RCS, VCS linear region is from 0 to 4 V. To keep the 2-A nominal current in the 0- to 3-V range, calculate the RCS as in Equation 11.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com Typical Application (continued) Current Sense Voltage Vcs,H ADC Full Scale Range Max Normal Operating Current Operating Range Open Load Current On-state: Normal open load/short to battery Over current On-state: Current limit, thermal fault Off-state: Open load/ short to battery Figure 46. Step 1: Distinguish Short to GND in On-State VBAT VS OPEN LOAD Vol,off ST/CS FAULT OUT Rpd Figure 47.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 Typical Application (continued) Table 3. Test Items Test Condition Test Cycles Cold repetitive short circuit test – short pulse –40°C, 10-ms pulse, cool down 1M Cold repetitive short circuit test – long pulse –40°C, 300-ms pulse, cool down 1M Hot repetitive short circuit test 25°C, keeping short 1M Different grade levels are specified according to the pass cycles.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com 9.2.3 Application Curves Figure 48 shows a test example of initial short circuit inrush current limit. Test condition: VS = 13.5 V, input is from low to high, load is short to GND or with 470-µF capacitive load, external current limit is 2 A. CH1 is the output current. CH3 is the input step. Figure 49 shows a test example of a hard short-circuit inrush current limit. Test condition: VS= 13.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 10 Power Supply Recommendations The device is qualified for both automotive and industrial applications. The normal power supply connection is a 12-V automotive system or 24-V industrial system. Detailed supply voltage should be within the range specified in the Recommended Operating Conditions. 11 Layout 11.1 Layout Guidelines To prevent thermal shutdown, TJ must be less than 150°C.
TPS1H100-Q1 SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 www.ti.com Layout Example (continued) 11.2.2 With a GND Network With a GND network, tie the thermal pad as one trace to the board GND copper after the GND network. GND Network NC 1 14 ST/CS GND 2 13 CL IN 3 12 DIAG_EN NC 4 11 NC OUT 5 10 VS OUT 6 9 VS OUT 7 8 VS Thermal Pad Figure 51. With a GND Network Layout 11.
TPS1H100-Q1 www.ti.com SLVSCM2A – OCTOBER 2014 – REVISED JANUARY 2014 12 Device and Documentation Support 12.1 Trademarks All trademarks are the property of their respective owners. 12.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.3 Glossary SLYZ022 — TI Glossary.
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PACKAGE OPTION ADDENDUM www.ti.com 2-Apr-2015 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PACKAGE MATERIALS INFORMATION www.ti.com 3-Apr-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPS1H100AQPWPRQ1 HTSSOP PWP 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 TPS1H100BQPWPRQ1 HTSSOP PWP 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.
PACKAGE MATERIALS INFORMATION www.ti.com 3-Apr-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS1H100AQPWPRQ1 HTSSOP PWP 14 2000 367.0 367.0 35.0 TPS1H100BQPWPRQ1 HTSSOP PWP 14 2000 367.0 367.0 35.
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