Datasheet

SBCT3045-3G ... SBCT30200
Characteristics Kennwerte
Type
Typ
Forward voltage
Durchlass-Spannung
Forward voltage
Durchlass-Spannung
V
F
[V]
2
) @ I
F
[A] @ T
j
V
F
[V]
1
) @ I
F
[A] @ T
j
SBCT3045-3G
SBCT3060-3G
SBCT30100
SBCT30150...200/-AQ
typ. 0.43
tbd
typ. 0.46
typ. 0.75
5 25°C
< 0.50
< tbd
< 0.75
< 0.85
15 25°C
Leakage current
Sperrstrom
T
j
= 25°C
T
j
= 125°C
SBCT3045-3G...
SBCT3060-3G
V
R
= V
RRM
I
R
< 100 µA
1
)
typ. 10 mA
1
)
T
j
= 25°C
T
j
= 125°C
SBCT30100...
SBCT30200/-AQ
V
R
= V
RRM
I
R
< 10 µA
1
)
typ. 3 mA
1
)
Typical junction capacitance – Typische Sperrschichtkapazität V
R
= 4 V C
j
260 pF
1
)
Typical thermal resistance junction to case – Typ. Wärmewiderstand Sperrschicht – Gehäuse R
thC
1.5 K/W
2,3
)
Dimensions – Maße [mm]
Disclaimer: See data book
page 2 or website
Haftungssauschluss: Siehe
Datenbuch Seite 2 oder Internet
3 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
1 Per diode − Pro Diode
2 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
3 Measured at heat flange – Gemessen an der Kühlfahne
2 http://www.diotec.com/ © Diotec Semiconductor AG
SB CT3 0 4 0 ...4 5
SB CT3 0 6 0
SB CT3 0 1 0 0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
2
10
1
10
-1
10
-2
[A]
I
F
0
V
F
0.4 0.6
[V]
1.0
SB CT3 0 1 5 0...2 0 0
120
100
80
60
40
20
0
[%]
I
FAV
Rated forward current vs. temp. of the case )
3
Zul. Richtstrom in Abh. v. d. Temp. des Gehäuses
3
)
[°C]
T
C
150100
50
0
10
1
10
-1
10
-2
10
-3
[mA]
I
r
Typ. leakage current vs. reverse voltage
Typ. Sperrstrom in Abh. v. d. Sperrspannung
0 40 60 80 100
[%]
V
RRM
SBCT3 01 00
SBCT3 01 00
SBCT3 02 00
T = 25°C
j
T =1 25°C
j
1 10 100
10
4
10
3
10
2
10
[pF]
[V]
C
j
V
R
T = 2 5 °C
j
f = 1 .0 MHz
Ju nction capacitance vs. reverse voltage (typical)
Sperrschichtkap azität in Ab h. v.d. Sperrsp g. ( typ.)
SB CT3 0 15 0 ...2 0 0