Datasheet

MMBT2222A
Characteristics Kennwerte
T
j
= 25°C Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
1
)
V
CE
= 10 V I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
h
FE
35
50
75
100
40
–
–
–
–
300
–
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
1
)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
– –
0.3 V
1.0 V
Base-Emitter saturation voltage – Basis-Sättigungsspannung
1
)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
0.65 V
–
–
1.2 V
2.0 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CB
= 60 V E open
E open, T
j
= 125°C
I
CBO
– –
10 nA
10 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
V
EB
= 3 V C open I
EB0
– –- 100 nA
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz f
T
250 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz C
CBO
– – 8 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz C
EBO
– – 25 pF
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
V
CC
= 3 V, V
BE
= 0.5 V
I
C
= 150 mA, I
B1
= 15mA
t
d
– – 10 ns
t
r
– – 25 ns
storage time
fall time
V
CC
= 3 V, I
C
= 150 mA
I
B1
= I
B2
= 15 mA
t
s
– – 225 ns
t
f
– – 60 ns
Typical thermal resistance junction to ambient
Typischer Wärmewiderstand Sperrschicht – Umgebung
R
thA
420 K/W
2
)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
1 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/ © Diotec Semiconductor AG