Datasheet

EGL1A ... EGL1M
Characteristics Kennwerte
Type
Typ
Reverse recovery time
Sperrverzugszeit
Forward voltage
Durchlass-Spannung
Tj = 25°C t
rr
[ns]
1
) V
F
[V] at / bei I
F
[A]
EGL1A ... EGL1D < 50 < 1.25 1
EGL1G < 50 < 1.35 1
EGL1J ... EGL1M < 75 < 1.8 1
Leakage current
Sperrstrom
T
j
= 25°C
T
j
= 125°C
V
R
= V
RRM
V
R
= V
RRM
I
R
I
R
< 5 µA
< 50 µA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
< 75 K/W
2
)
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht − Anschluss
R
thT
< 40 K/W
1 I
F
= 0.5 A through/über I
R
= 1 A to/auf I
R
= 0.25 A
2 Mounted on P.C. board with 25 mm
2
copper pads at each terminal
Montage auf Leiterplatte mit 25 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/ © Diotec Semiconductor AG
EGL1A...D
EGL1G
EGL1J...M
T = 25°C
j
10
1
10
10
10
-1
-2
-3
[A]
I
F
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
120
100
80
60
40
20
0
[%]
I
FAV
Rated forward current versus ambient temperature )
Zul. Richtstrom in Abh. von der Umgebungstemp. )
1
1
[°C]
T
A
150100
50
0
EGL1A...EGL1G
EGL1J...EGL1M