Datasheet

DBI25-04A ... DBI25-16A
Characteristics Kennwerte
Forward voltage – Durchlass-Spannung T
j
= 25°C I
F
= 12.5 A V
F
< 1.05 V
1
)
Leakage current – Sperrstrom T
j
= 25°C
T
j
= 150°C
V
R
= V
RRM
I
R
I
R
< 10 µA
1
)
< 1500 µA
1
)
Isolation voltage terminals to case – Isolationsspg. Anschlüsse zum Gehäuse V
ISO
> 2500 V
Thermal resist. junction to ambient – Wärmewiderst. Sperrschicht – Umgebung R
thA
< 50 K/W
1
)
Thermal resistance junction to case – Wärmewiderstand Sperrschicht – Gehäuse R
thC
< 4.3 K/W
1
)
Admissible mounting torque
Zulässiges Anzugsdrehmoment
M4 9 ± 10% lb.in.
1 ± 10% Nm
1 Valid per diode – Gültig pro Diode
2 http://www.diotec.com/ © Diotec Semiconductor AG
120
100
80
60
40
20
0
[%]
I
FAV
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
[°C]
T
C
150100
50
0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
10
10
1
10
3
2
-1
[A]
I
F
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
T = 25°C
j
T = 125°C
j
350a-(12.5a-1,05v)
Relative transient thermal impedance vs. pulse duration (typical)
Relativer transienter Wärmewiderstand über Impulsdauer (typisch)
100
10
1
10 10 10 10 1 10
-4 -3 -2 -1
[s] [t ]
p
[%]
Z
R
th
th