Datasheet

BFS20
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
Base-Emitter-voltage – Basis-Emitter-Spannung
1
)
V
CE
= 10 V, - I
C
= 7 mA V
BE
– – 0.9 V
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 10 V, I
C
= 5 mA, f = 100 MHz f
T
275 MHz 450 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– 1 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
< 420 K/W
2
)
Marking - Stempelung BFS20 = 8O
1 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/ © Diotec Semiconductor AG