Datasheet

BCW66F
Characteristics Kennwerte
T
j
= 25°C Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
V
CE
= 10 V, I
C
= 100 µA
h
FE
50 – –
V
CE
= 1 V, I
C
= 10 mA 110 – –
V
CE
= 1 V, I
C
= 100 mA 160 – 400
V
CE
= 2 V, I
C
= 500 mA 60 – –
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
1
)
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
–
–
–
–
300 mV
700 mV
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung
1
)
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
–
–
–
–
1.25 V
2.0 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CB
= 45 V, (E open)
V
CE
= 45 V, T
j
= 125°C, (E open)
I
CB0
–
–
–
–
20 nA
20 µA
Emitter-Base cutoff current
V
EB
= 4 V, (C open) I
EB0
– – 20 nA
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 10 V, I
C
= 20 mA, f = 100 MHz f
T
– 100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz C
CBO
– 12 pF –
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
2 http://www.diotec.com/ © Diotec Semiconductor AG