Datasheet

BC856AW ... BC859CW
Characteristics Kennwerte
T
j
= 25°C Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
V
CE
= 5 V, I
C
= 10 µA
Group A
Group B
Group C
h
FE
–
–
–
140
250
480
–
–
–
V
CE
= 5 V, I
C
= 2 mA
Group A
Group B
Group C
h
FE
125
220
420
180
290
520
250
475
800
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
–
–
75 mV
250 mV
300 mV
650 mV
Base-Emitter saturation voltage – Basis-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
BEsat
–
–
700 mV
850 mV
–
–
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
V
BE
600 mV
–
650 mV
–
750 mV
820 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CB
= 30 V, (E open)
V
CE
= 30 V, T
j
= 125°C, (E open)
I
CBO
–
–
–
–
15 nA
5 µA
Emitter-Base cutoff current
V
EB
= 5 V, (C open) I
EBO
– – 100 nA
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz f
T
– 100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– – 4.5 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz C
EBO
– 10 pF 15 pF
Noise figure – Rauschzahl
- V
CE
= 5 V, - I
C
= 200 µA, R
G
= 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC856W ... BC858W
BC859W
F
–
–
–
1 dB
10 dB
4 dB
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
R
thA
< 620 K/W
2
)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2%
Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/ © Diotec Semiconductor AG