Datasheet

BC856 ... BC860
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
- V
CE
= 5 V, I
C
= - 2 mA
- V
CE
= 5 V, I
C
= - 10 mA
- V
BE
- V
BE
600 mV
–
–
–
750 mV
720 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 30 V, (E open)
- V
CE
= 30 V, T
j
= 125°C, (E open)
- I
CB0
- I
CB0
–
–
–
–
15 nA
4 µA
Emitter-Base cutoff current
- V
EB
= 5 V, (C open) - I
EB0
– – 100 nA
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz f
T
100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– – 4.5 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz C
EB0
– 9 pF –
Noise figure – Rauschzahl
- V
CE
= 5 V, - I
C
= 200 µA
R
G
= 2 kΩ, f = 1 kHz, Δf = 200 Hz
BC856 ... BC858
BC859 ... BC860
F
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
< 420 K/W
1
)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC846 ... BC850
Marking of available current gain groups
Stempelung der lieferbaren
Stromverstärkungsgruppen
BC856A = 3A
BC856B = 3B
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC860B = 3F
BC860C
= 3G or 4G
BC858A = 3E
BC858B = 3F
BC858C = 3G
BC859B = 3F
BC859C
= 3G or 4C
2 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/ © Diotec Semiconductor AG