Datasheet

BC856 ... BC860
Characteristics Kennwerte
T
j
= 25°C Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- V
CE
= 5 V - I
C
= 10 µA Group A
Group B
Group C
h
FE
–
–
–
90
150
270
–
–
–
- I
C
= 2 mA
Group A
Group B
Group C
h
FE
125
220
420
180
290
520
250
475
800
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
1
)
- I
C
= 10 mA - I
B
= 0.5 mA
- I
C
= 100 mA - I
B
= 5 mA
- V
CEsat
–
–
–
–
300 mV
650 mV
Base-Emitter saturation voltage – Basis-Sättigungsspannung
2
)
- I
C
= 10 mA - I
B
= 0.5 mA
- I
C
= 100 mA - I
B
= 5 mA
- V
BEsat
–
–
700 mV
900 mV
–
–
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
- V
CE
= 5 V - I
C
= - 2 mA
- V
CE
= 5 V - I
C
= - 10 mA
- V
BE
600 mV
–
–
–
750 mV
820 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CE
= 30 V
- V
CE
= 30 V T
j
= 125°C
E open - I
CBO
–
–
–
–
15 nA
4 µA
Emitter-Base cutoff current
- V
EB
= 5 V C open - I
EBO
– – 100 nA
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz f
T
100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– 4.5 pF –
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz C
EB0
– 9 pF –
Noise figure – Rauschzahl
- V
CE
= 5 V, - I
C
= 200 µA
R
G
= 2 kΩ, f = 1 kHz, Δf = 200 Hz
BC856 ... BC858
BC859 ... BC860
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Typical thermal resistance junction to ambient
Typischer Wärmewiderstand Sperrschicht – Umgebung
R
thA
< 420 K/W
2
)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/ © Diotec Semiconductor AG