Datasheet

BC846 ... BC850
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
V
BE
V
BE
580 mV
–
660 mV
–
700 mV
720 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CB
= 30 V, (E open)
V
CE
= 30 V, T
j
= 125°C, (E open)
I
CB0
I
CB0
–
–
–
–
15 nA
5 µA
Emitter-Base cutoff current
V
EB
= 5 V, (C open) I
EB0
– – 100 nA
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz f
T
– 300 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– 3.5 pF 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz C
EB0
– 9 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
< 420 K/W
1
)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC856 ... BC860
Marking of available current gain groups
Stempelung der lieferbaren
Stromverstärkungsgruppen
BC846A = 1A
BC846B = 1B
BC847A = 1E
BC847B = 1F
BC847C = 1G
BC850B = 1F
BC850C = 1G
BC848A = 1E
BC848B = 1F
BC848C = 1G
BC849B = 1F
BC849C = 1G
2 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/ © Diotec Semiconductor AG