Datasheet

BC817K / BC818K
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CB
= 25 V, (E open) I
CBO
– – 100 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
V
EB
= 4 V, (C open) I
EBO
– – 100 nA
Transition Frequency – Transitfrequenz
V
CE
= 5 V, I
C
= 50 mA, f = 100 MHz f
T
– 170 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– 3 pF –
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpunkt
R
thsp
< 70 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC807K / BC808K
Marking of available current gain groups per type
Stempelung der lieferbaren
Stromverstärkungsgruppen pro Typ
BC817K-16 = 6A or 6CR
BC817K-25 = 6B or 6CS
BC817K-40 = 6C or 6CT
BC818K-16 = 6E or 6CR
BC818K-25 = 6F or 6CS
BC818K-40 = 6G or 6CT
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