Datasheet

BC817W ... BC818W
Characteristics
2
) Kennwerte
2
)
T
j
= 25°C Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
1
)
V
CE
= 1 V, I
C
= 100 mA Group -16
Group -25
Group -40
h
FE
100
160
250
–
–
–
250
400
600
V
CE
= 1 V, I
C
= 500 mA h
FE
40 – –
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
4
)
I
C
= 500 mA, I
B
= 50 mA V
CEsat
– – 0.7 V
Base-Emitter-voltage – Basis-Emitter-Spannung
1
)
V
CE
= 1 V, I
C
= 500 mA V
BE
– – 1.2 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CB
= 20 V, (E open) I
CBO
– – 100 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
V
EB
= 5 V, (C open) I
EBO
– – 100 nA
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz f
T
100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– – 5 pF
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
R
thA
< 625 K/W
.2
)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1