Datasheet

BC817 / BC818
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
V
CE
= 1 V, I
C
= 500 mA V
BE
– – 1.2 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CB
= 20 V, (E open)
V
CB
= 20 V, T
j
= 125°C, (E open)
I
CB0
I
CB0
–
–
–
–
100 nA
5 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
V
EB
= 4 V, (C open) I
EB0
– – 100 nA
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz f
T
– 100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– 12 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
< 420 K/W
1
)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC807 / BC808
Marking of available current gain groups per type
Stempelung der lieferbaren Stromverstärkungsgruppen
pro Typ
BC817-16 = 6A or 6CR
BC817-25 = 6B or 6CS
BC817-40 = 6C or 6CT
BC818-16 = 6E or 6CR
BC818-25 = 6F or 6CS
BC818-40 = 6G or 6CT
2 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1