Datasheet

BC807 ... BC808
Characteristics Kennwerte
T
j
= 25°C Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
1
)
- V
CE
= 1 V, - I
C
= 100 mA
Group -16
Group -25
Group -40
h
FE
100
160
250
–
–
–
250
400
630
- V
CE
= 1 V, - I
C
= 500 mA h
FE
40 – –
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2
)
- I
C
= 500 mA, - I
B
= 50 mA - V
CEsat
– – 0.7 V
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung
2
)
- I
C
= 500 mA, - I
B
= 50 mA - V
BEsat
– – 1.3 V
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
- V
CE
= 1 V, - I
C
= 500 mA - V
BE
– – 1.2 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 20 V, (E open)
- V
CB
= 20 V, T
j
= 125°C, (E open)
- I
CB0
–
–
–
–
100 nA
5 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- V
EB
= 4 V, (C open) - I
EB0
– – 100 nA
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 50 MHz f
T
– 100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, - I
E
=i
e
= 0, f = 1 MHz C
CBO
– 12 pF –
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
R
thA
< 420 K/W
2
)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1