Datasheet

BC556B, BC557A, B, C, BC558B
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −2.0 mAdc, I
B
= 0) BC556
BC557
BC558
V
(BR)CEO
−65
−45
−30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage
(I
C
= −100 mAdc) BC556
BC557
BC558
V
(BR)CBO
−80
−50
−30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage
(I
E
= −100 mAdc, I
C
= 0) BC556
BC557
BC558
V
(BR)EBO
−5.0
−5.0
−5.0
−
−
−
−
−
−
V
Collector−Emitter Leakage Current
(V
CES
= −40 V) BC556
(V
CES
= −20 V) BC557
BC558
(V
CES
= −20 V, T
A
= 125°C) BC556
BC557
BC558
I
CES
−
−
−
−
−
−
−2.0
−2.0
−2.0
−
−
−
−100
−100
−100
−4.0
−4.0
−4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −5.0 V) A Series Device
B Series Devices
C Series Devices
(I
C
= −2.0 mAdc, V
CE
= −5.0 V) BC557
A Series Device
B Series Devices
C Series Devices
(I
C
= −100 mAdc, V
CE
= −5.0 V) A Series Device
B Series Devices
C Series Devices
h
FE
−
−
−
120
120
180
420
−
−
−
90
150
270
−
170
290
500
120
180
300
−
−
−
800
220
460
800
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
(I
C
= −10 mAdc, I
B
= see Note 1)
(I
C
= −100 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
−
−
−
−0.075
−0.3
−0.25
−0.3
−0.6
−0.65
V
Base−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
(I
C
= −100 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
−
−
−0.7
−1.0
−
−
V
Base−Emitter On Voltage
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
V
BE(on)
−0.55
−
−0.62
−0.7
−0.7
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 V, f = 100 MHz) BC556
BC557
BC558
f
T
−
−
−
280
320
360
−
−
−
MHz
Output Capacitance
(V
CB
= −10 V, I
C
= 0, f = 1.0 MHz)
C
ob
− 3.0 6.0 pF
Noise Figure
(I
C
= −0.2 mAdc, V
CE
= −5.0 V, BC556
R
S
= 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC557
BC558
NF
−
−
−
2.0
2.0
2.0
10
10
10
dB
Small−Signal Current Gain
(I
C
= −2.0 mAdc, V
CE
= 5.0 V, f = 1.0 kHz) BC557
A Series Device
B Series Devices
C Series Devices
h
fe
125
125
240
450
−
−
−
−
900
260
500
900
−
1. I
C
= −10 mAdc on the constant base current characteristics, which yields the point I
C
= −11 mAdc, V
CE
= −1.0 V.