Datasheet

BC546 ... BC549
Characteristics Kennwerte
T
j
= 25°C Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
1
)
V
CE
= 5 V I
C
= 10 µA Group A
Group B
Group C
h
FE
–
–
–
90
150
270
–
–
–
I
C
= 2 mA Group A
Group B
Group C
h
FE
110
200
420
–
–
–
220
450
800
I
C
= 100 mA Group A
Group B
Group C
h
FE
–
–
–
120
200
400
–
–
–
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
V
CE
=
80 V
50 V
30 V
B-E short
BC546
BC547
BC548 / BC549
I
CES
– 0.2 nA 15 nA
V
CE
=
80 V
50 V
30 V
B-E short
T
j
= 125°C
BC546
BC547
BC548 / BC549
I
CES
– – 4 µA
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
1
)
I
C
= 10 mA I
B
= 0.5 mA
I
C
= 100 mA I
B
= 5 mA
V
CEsat
–
–
80 mV
200 mV
250 mV
600 mV
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung
1
)
I
C
= 10 mA I
B
= 0.5 mA
I
C
= 100 mA I
B
= 5 mA
V
BEsat
–
–
700 mV
900 mV
–
–
Base-Emitter-voltage – Basis-Emitter-Spannung
1
)
V
CE
= 5 V I
C
= 2 mA
V
CE
= 5 V I
C
= 10 mA
V
BE
580 mV
–
660 mV
–
700 mV
770 mV
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz f
T
– 300 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– 3.5 pF 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz C
EBO
– 9 pF –
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 200 µA, R
G
= 2 kΩ
f = 1 kHz, Δf = 200 Hz
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
R
thA
< 200 K/W
2
)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 http://www.diotec.com/ © Diotec Semiconductor AG