Datasheet

BC337-xBK / BC338-xBK
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
V
CE
= 1 V, I
C
= 300 mA, V
BE
– – 1.2 V
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
V
CE
= 45 V, (B-E short)
V
CE
= 25 V, (B-E short)
BC337
BC338
I
CES
I
CES
–
–
2 nA
2 nA
100 nA
100 nA
V
CE
= 45 V, T
j
= 125°C, (B-E short)
V
CE
= 25 V, T
j
= 125°C, (B-E short)
BC337
BC338
I
CES
I
CES
–
–
–
–
10 µA
10 µA
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz f
T
– 100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– 12 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
< 200 K/W
1
)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC327 / BC328
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC337-16
BC337-25
BC337-40
BC338-16
BC338-25
BC338-40
2 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1