Datasheet

2N7000
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
Drain-Source breakdown voltage – Drain-Source Durchbruchspannung
I
D
= 10 µA V
(BR)DSS
60 V
Drain-Source leakage current – Drain-Source Leckstrom G short
V
DS
= 48 V
V
DS
= 48 V, T
j
= 125°C
I
DSS
I
DSS
1 µA
1 mA
Gate-Body leakage current – Gate-Substrat Leckstrom
V
GS
= ±15 V ±I
GSS
10 nA
Gate-Threshold voltage – Gate-Source Schwellspannung
V
GS
= V
DS
, I
D
= 1 mA V
GS(th)
0.8 V 3 V
Drain-Source on-voltage – Drain-Source-Spannung
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 4.5 V, I
D
= 75 mA
V
DS(on)
2.5 V
0.45 V
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 4.5 V, I
D
= 75 mA
R
DS(on)
R
DS(on)
5 Ω
6 Ω
Forward Transconductance – Übertragungssteilheit
V
DS
= 10 V, I
D
= 200 mA
g
FS
100 mS
Input Capacitance – Eingangskapazität
V
DS
= 25 V, f = 1 MHz C
iss
60 pF
Output Capacitance – Ausgangskapazität
V
DS
= 25 V, f = 1 MHz C
oss
25 pF
Reverse Transfer Capacitance – Rückwirkungskapazität
V
DS
= 25 V, f = 1 MHz C
rss
5 pF
Turn-On Delay Time – Einschaltverzögerung
V
DD
= 15 V, R
L
= 30 Ω, I
D
= 0.5 A, V
GS
= 10 V, R
G
= 25 Ω t
on
10 ns
Turn-Off Delay Time – Ausschaltverzögerung
V
DD
= 15 V, R
L
= 30 Ω, I
D
= 0.5 A, V
GS
= 10 V, R
G
= 25 Ω t
off
10 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
< 357 K/W
1
)
1 Device mounted on standard PCB material
Bauteil montiert auf Standard-Leiterplattenmaterial
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