Datasheet

2N5401
Characteristics Kennwerte
T
j
= 25°C Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
1
)
- I
C
= 1 mA, - V
CE
= 5 V
- I
C
= 10 mA, - V
CE
= 5 V
- I
C
= 50 mA, - V
CE
= 5 V
h
FE
50
60
50
–
–
–
–
240
–
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 100 V, (E open)
- V
CB
= 120 V, (E open)
- I
CBO
–
–
–
–
100 nA
50 nA
Emitter-Base-cutoff current – Emitter-Basis-Reststrom
- V
EB
= 3 V, (C open) - I
EBO
– –- 50 nA
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 1 mA
- I
C
= 50 mA, - I
B
= 5 mA
- V
CEsat
–
–
–
–
0.2 V
0.5 V
Base-Emitter saturation voltage – Basis-Sättigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 1 mA
- I
C
= 50 mA, - I
B
= 5 mA
- V
BEsat
–
–
–
–
1.0 V
1.0 V
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 50 MHz f
T
100 MHz – 400 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– – 6 pF
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – umgebende
R
thA
< 200 K/W
2
)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1