User Manual
ZXTPS718MC
Document Number DS31937 Rev. 3 - 2
6 of 10
www.diodes.com
April 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
ZXTPS718MC
PNP - Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-25 -35 - V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 16)
BV
CEO
-20 -25 - V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.5 - V
I
E
= -100µA
Collector Cutoff Current
I
CBO
- - -100 nA
V
CB
= -20V
Emitter Cutoff Current
I
EBO
- - -100 nA
V
EB
= -6V
Collector Emitter Cutoff Current
I
CES
- - -100 nA
V
CES
= -16V
Static Forward Current Transfer Ratio (Note 16)
h
FE
300 475 -
-
I
C
= -10mA, V
CE
= -2V
300 450 -
I
C
= -100mA, V
CE
= -2V
150 230 -
I
C
= -2A, V
CE
= -2V
15 30 -
I
C
= -6A, V
CE
= -2V
Collector-Emitter Saturation Voltage (Note 16)
V
CE(sat)
- -19 -30
mV
I
C
= -0.1A, I
B
= -10mA
- -170 -220
I
C
= -1A, I
B
= -20mA
- -190 -250
I
C
= -1.5A, I
B
= -50mA
- -240 -350
I
C
= -2.5A, I
B
= -150mA
- -225 -300
I
C
= -3.5A, I
B
= -350mA
Base-Emitter Turn-On Voltage (Note 16)
V
BE
(
on
)
- -0.87 -0.95 V
I
C
= -3.5A, V
CE
= -2V
Base-Emitter Saturation Voltage (Note 16)
V
BE
(
sat
)
- -1.10 -1.12 V
I
C
= -3.5A, I
B
= -350mA
Output Capacitance
C
obo
- 21 30 pF
V
CB
= -10V. f = 1MHz
Transition Frequency
f
T
150 180 - MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Turn-on Time
t
on
- 40 - Ns
V
CC
= -10V, I
C
= -1A
I
B1
= I
B2
= -50mA Turn-off Time
t
off
- 670 - Ns
Schottky - Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage
BV
R
40 60 - V
I
R
= -300µA
Forward Voltage (Note 16)
V
F
- 240 270
mV
I
F
= 50mA
- 265 290
I
F
= 100mA
- 305 340
I
F
= 250mA
- 355 400
I
F
= 500mA
- 390 450
I
F
= 750mA
- 425 500
I
F
= 1000mA
- 495 600
I
F
= 1500mA
- 420 -
I
F
= 1000mA, T
A
= 100°C
Reverse Current
I
R
- 50 100 µA
V
R
= 30V
Diode Capacitance
C
D
- 25 - pF
V
R
= 25V, f = 1MHz
Reverse Recovery Time
t
rr
- 12 - Ns
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
Notes: 16. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.