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ZXTPS718MC

Document Number DS31937 Rev. 3 - 2

1 of 10

www.diodes.com

April 2011

Product Line o

Diodes Incorporated

ZXTPS718MC

20V PNP LOW SATURATION TRANSISTOR AND

40V, 1A SCHOTTKY DIODE COMBINATION

Features and Benefits

PNP Transistor

• BV

CEO

> -20V

• I

= -3.5A Continuous Collector Current

• Low Saturation Voltage (-220mV max @ -1A)

• R

SAT

= 64mΩ for a low equivalent On-Resistance

• h

characterized up to -6A for high current gain hold up

Schottky Diode

• BV

> 40V

• I

FAV

= 3A Average Peak Forward Current

• Low V

< 500mV (@1A) for reduced power loss

• Fast switching due to Schottky barrier

• Low profile 0.8mm high package for thin applications

• R

θJA

efficient, 40% lower than SOT26

• 6mm

footprint, 50% smaller than TSOP6 and SOT26

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: DFN3020B-8

• Case Material: Molded Plastic, “Green” Molding Component

• Terminals: Pre-Plated NiPdAu leadframe

• Nominal package height: 0.8mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.013 grams (approximate)

Applications

• DC – DC Converters

• Charging circuits

• Mobile phones

• Motor control

• Portable applications

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTPS718MCTA 2S1 7 8 3000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com

3. For packaging details, go to our website http://www.diodes.com

Marking Information

2S1 = Product type marking code

Top view, dot denotes pin 1

Equivalent Circuit

Top View

Bottom View

DFN3020B-8

PNP Transistor Schottky Diode

Bottom View

Pin-Out

n/c = Not Connected internally

K2 K2 C1 C1

A2 n/c E1 B1

K2 C1

Pin 1

2S1

Summary of content (10 pages)

PAGE 1
A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -20V • IC = -3.
PAGE 2
A Product Line of Diodes Incorporated ZXTPS718MC PNP - Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol VCBO VCEO VEBO ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Notes 4 and 7) (Notes 5 and 7) Base Current IC IB Limit -25 -20 -7 -6 -3.5 -3.9 -1 Unit Value 1.5 12 2.45 19.6 1.13 8 1.7 13.6 83.3 51.0 111 73.5 17.
PAGE 3
A Product Line of Diodes Incorporated ZXTPS718MC PNP - Thermal Characteristics 10 2.0 Max Power Dissipation (W) IC Collector Current (A) VCE(SAT) Limited 1 DC 1s 100ms 0.1 10ms 8sqcm 2oz Cu One active die 0.01 1ms 100us Single Pulse, T amb=25°C 0.1 1 10 VCE Collector-Emitter Voltage (V) T amb=25°C 10sqcm 1oz Cu Two active die 1.5 8sqcm 2oz Cu One active die 1.0 0.5 10sqcm 1oz Cu One active die 0.
PAGE 4
A Product Line of Diodes Incorporated ZXTPS718MC Schottky - Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current D = 0.5 Pulse width ≤ 300µs t ≤ 100µs t ≤ 10ms Symbol VR IF Limit 40 1.
PAGE 5
A Product Line of Diodes Incorporated ZXTPS718MC Schottky - Thermal Characteristics 8sqcm 2oz Cu One active die 60 D=0.5 40 20 Single Pulse D=0.2 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 1.5 80 10sqcm 1oz Cu Two active die 8sqcm 2oz Cu One active die 1.0 10sqcm 1oz Cu One active die 0.5 0.0 0 Pulse Width (s) 100 125 Tj max=125°C 2oz Cu Two active die Continuous 2.0 2oz Cu One active die 1.0 0.5 1oz Cu One active die 0.
PAGE 6
A Product Line of Diodes Incorporated ZXTPS718MC PNP - Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 16) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Collector-Emitter Saturation Voltage (Note 16) VCE(sat) Base-Emitter Turn-On Voltage (Note 16) Base-Emitter Saturation Voltage (Note 16) Out
PAGE 7
A Product Line of Diodes Incorporated ZXTPS718MC PNP - Typical Electrical Characteristics 0.25 1 IC/IB=50 Tamb=25°C VCE(SAT) (V) VCE(SAT) (V) 0.20 100m IC/IB=100 IC/IB=50 10m IC/IB=10 1m 10m 100m 1 25°C 0.10 -55°C 0.05 0.00 1m 10 IC Collector Current (A) 100°C 0.15 10m 1.4 1.0 450 25°C 360 0.6 270 0.4 180 -55°C 0.2 0.0 1m 90 10m 100m 1 IC Collector Current (A) 1.0 0 10 VBE(SAT) (V) 540 Typical Gain (hFE) Normalised Gain VCE=2V 630 100°C 0.
PAGE 8
A Product Line of Diodes Incorporated ZXTPS718MC Schottky - Typical Electrical Characteristics IR - Reverse Current (A) IF - Forward Current (A) 100m 1 +125°C 10m 100m +85°C 1m 100µ +125°C +85°C +25°C 0°C -40°C -55°C 10m 1m 0.0 0.2 0.4 +25°C 10µ 0°C -40°C -55°C 1µ 100n 10n 0.6 0 10 20 Foward Current (A) IFRM - Repetitive Peak 8 6 4 PFAV - Average Forward Power (W) Repetitive Rating Rectangular Pulse Width=300μs D= 0.02 0.05 0.1 0.2 0.
PAGE 9
A Product Line of Diodes Incorporated ZXTPS718MC Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 b Z e L Suggested Pad Layout C X Y1 G1 G Y2 Y X1 ZXTPS718MC Document Number DS31937 Rev. 3 - 2 Dimensions C G G1 X X1 Y Y1 Y2 9 of 10 www.diodes.
PAGE 10
A Product Line of Diodes Incorporated ZXTPS718MC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).