User guide

ZXTP4003Z
Datasheet Number: DS35460 Rev. 1 - 2
3 of 5
www.diodes.com
December 2011
© Diodes Incorporated
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Product Line o
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Diodes Incorporated
ZXTP4003Z
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Emitter Breakdown Voltage (Note 7)
BV
CEO
-100 -170 - V
I
C
= -10mA
Collector Cut-off Current
I
CBO
- - -50 nA
V
CB
= -100V
Emitter Cut-off Current
I
EBO
- - -50 nA
V
EB
= -7V
Static Forward Current Transfer Ratio (Note 7)
h
FE
60
100
133
112
-
-
-
I
C
= -85mA, V
CE
= -0.15V
I
C
= -150mA, V
CE
= -0.2V
Base-Emitter Turn-On Voltage (Note 7)
V
BE
(
on
)
- -0.71 -0.95 V
I
C
= -150mA, V
CE
= -0.2V
Delay Time
t
(
d
)
- 378 - ns
V
CC
= -80V, I
C
= -150mA,f
-I
B2
= 1.5mA, V
CE(ON)
= -0.2V
Rise Time
t
(
r
)
- 388 - ns
Storage Time
t
(
s
)
- 1348 - ns
Fall Time
t
(
f
)
- 382 - ns
Storage Time
t
(
s
)
- 75 - ns
V
CC
= -80V, I
C
= -150mA,
-I
B2
= -1.5mA, V
CE(ON)
= -4V Fall Time
t
(
f
)
- 363 - ns
Notes: 7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
Electrical Characteristics @T
A
= 25°C unless otherwise specified
100µ 1m 10m 100m 1
0
100
200
300
400
500
100µ 1m 10m 100m 1
0.2
0.4
0.6
0.8
1.0
100m 1 10 100
0
10
20
30
40
50
Typical Gain (h
FE
)
125°C
h
FE
v I
C
V
CE
= -0.2V
-55°C
25°C
85°C
-I
C
Collector Current (A)
125°C
V
BE(on)
v I
C
V
CE
= -0.2V
85°C
25°C
-55°C
-V
BE(on)
(V)
-I
C
Collector Current (A)
Capacitance v Voltage
f = 1MHz
Cobo
Capacitance (pF)
-Voltage(V)