User guide

ZXTN2010A
SEMICONDUCTORS
ISSUE 2 - MAY 2006
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
(a)
R
⍜JA
125 °C/W
Junction to ambient
(b)
R
⍜JA
175 °C/W
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b For a device mounted in a socket in still air conditions. Collector lead length 10mm.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
CBO
150 V
Collector-emitter voltage BV
CEO
60 V
Emitter-base voltage BV
EBO
7V
Continuous collector current
(a)
I
C
4.5 A
Peak pulse current I
CM
15 A
Practical power dissipation
(a)
Linear derating factor
P
D
1.0
8
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
0.71
5.7
W
mW/°C
Operating and storage temperature range T
j
,T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS