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SEMICONDUCTORS

SUMMARY

CEO

= 60V : R

SAT

= 34m ; I

= 4.5A

DESCRIPTION

Packaged in the E-line outline this new low saturation 60V NPN transistor

offers extremely low on state losses making it ideal for use in DC-DC circuits

and various driving and power management functions.

FEATURES

•

Extemely low equivalent on-resistance; R

SAT

= 34m at 5A

•

4.5 amps continuous current

•

Up to 15 amps peak current

•

Very low saturation voltages

APPLICATIONS

•

Emergency lighting circuits

•

Motor driving (including DC fans)

•

Solenoid, relay and actuator drivers

•

DC modules

•

Backlight inverters

DEVICE MARKING

ZXT

N20

ZXTN2010A

ISSUE 2 - MAY 2006

60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE

DEVICE QUANTITY

ZXTN2010ASTOA

ZXTN2010ASTZ

2000 units / reel

2000 units / carton

ORDERING INFORMATION

PINOUT

Summary of content (6 pages)

PAGE 1
ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extemely low equivalent on-resistance; RSAT = 34m at 5A E-LINE • 4.
PAGE 2
ZXTN2010A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-base voltage BV CBO 150 V Collector-emitter voltage BV CEO 60 V BV EBO 7 V A Emitter-base voltage (a) LIMIT UNIT IC 4.5 Peak pulse current I CM 15 A Practical power dissipation (a) PD 1.0 W Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor 8 mW/°C PD 0.71 W 5.
PAGE 3
ZXTN2010A CHARACTERISTICS ISSUE 2 - MAY 2006 3 SEMICONDUCTORS
PAGE 4
ZXTN2010A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Collector-base breakdown voltage BV CBO 150 190 V I C =100␮A Collector-emitter breakdown voltage BV CER 150 190 V I C =1␮A, RBⱕ1k⍀ Collector-emitter breakdown voltage BV CEO 60 80 V I C =10mA* Emitter-base breakdown voltage BV EBO 7 8.1 V I E =100␮A Collector cut-off current I CBO 50 nA V CB =120V 0.
PAGE 5
ZXTN2010A TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2006 5 SEMICONDUCTORS
PAGE 6
ZXTN2010A PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 0.41 0.495 0.016 0.0195 B 0.41 0.495 0.016 0.0195 C 3.61 4.01 0.142 0.158 D 4.37 4.77 0.172 0.188 E 2.16 2.41 0.085 0.095 F — 2.50 — 0.098 G 1.27 NOM L 13.00 13.97 0.050 NOM 0.512 0.