Owner manual

ZXT953K
SEMICONDUCTORS
ISSUE 1 - DECEMBER 2003
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
-140 -170 V I
C
= -100␮A
Collector-emitter breakdown voltage BV
CER
-140 -170 V I
C
=-1␮A, R
BE
=ⱕ1k⍀
Collector-emitter breakdown voltage BV
CEO
-100 -125 V I
C
= -10mA*
Emitter-base breakdown voltage BV
EBO
-7 -8.1 V I
E
= -100␮A
Collector cut-off current I
CBO
⬍1 -20 nA V
CB
= -100V
Collector cut-off current I
CER
⬍1 -20 nA V
CB
= -100V, R
BE
= ⱕ1k⍀
Emitter cut-off current I
EBO
⬍1 -10 nA V
EB
= -6V
Collector-emitter saturation voltage V
CE(SAT)
-20
-80
-140
-335
-30
-100
-175
-390
mV
mV
mV
mV
I
C
= -0.1A, I
B
= -10mA*
I
C
= -1A, I
B
= -100mA*
I
C
= -2A, I
B
= -200mA*
I
C
= -5A, I
B
= -500mA*
Base-emitter saturation voltage V
BE(SAT)
-1.01 -1.1 mV I
C
= -5A, I
B
= -500mA*
Base-emitter turn-on voltage V
BE(ON)
-0.94 -1.05 mV I
C
= -5A, V
CE
= -1V*
Static forward current transfer ratio h
FE
100
100
50
15
225
200
85
30
15
300
I
C
= -10mA, V
CE
= -1V*
I
C
= -1A, V
CE
= -1V*
I
C
= -3A, V
CE
= -1V*
I
C
= -5A, V
CE
= -1V*
I
C
= -10A, V
CE
= -1V*
Transition frequency f
T
125 MHz I
C
= -100mA, V
CE
= -10V
f = 50MHz
Output capacitance C
OBO
65 pF V
CB
= -10V, f = 1MHz*
Switching times t
ON
t
OFF
110
460
nS
nS
I
C
= -2A, V
CC
= -10V,
I
B1
=I
B2
= -200mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.