Instruction Manual

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SM-8 BIPOLAR TRANSISTOR H-BRIDGE

PRELIMINARY DATA SHEET ISSUE B JULY 1997

FEATURES

* Compact package

* Low on state losses

* Low drive requirements

* Operates up to 40V supply

* 2 Amp continuous rating

PARTMARKING DETAIL  ZHB6790

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL NPNs PNPs UNIT

Collector-Base Voltage V

CBO

50 -50 V

Collector-Emitter Voltage V

CEO

40 -40 V

Emitter-Base Voltage V

EBO

5-5 V

Peak Pulse Current I

6-6 A

Continuous Collector Current I

2-2 A

Operating and Storage Temperature Range T

stg

-55 to +150 °C

SCHEMATIC DIAGRAM CONNECTION DIAGRAM

ZHB6790

SM-8

(8 LEAD SOT223)

Q2 Q3

Q4Q1

E2, E3

E1, E4

C1, C2

C3, C4

Summary of content (8 pages)

PAGE 1
SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 (8 LEAD SOT223) PARTMARKING DETAIL ZHB6790 ABSOLUTE MAXIMUM RATINGS.
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ZHB6790 THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at Tamb = 25°C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Ptot 1.25 2 W W Derate above 25°C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally 10 16 mW/ °C mW/ °C Thermal Resistance - Junction to Ambient* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally 100 62.5 °C/ W °C/ W 100 60 D=t1 t1 80 tP tP tP 40 60 D=0.5 D=1 D=0.2 20 D=0.
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ZHB6790 PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -50 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cutoff Current ICBO -0.1 µA VCB=-30V Emitter Cutoff Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.14 -0.25 -0.45 -0.75 V V V V IC=-100mA, IB=-0.
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ZHB6790 NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 50 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cutoff Current ICBO 0.1 µA VCB=35V Emitter Cutoff Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.16 0.5 0.35 V V V V IC=100mA, IB=0.5mA* IC=500mA, IB=2.
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PNP TRANSISTOR TYPICAL CHARACTERISTICS 1.8 1.6 IC/IB =100 1.8 Tamb=25°C IC/IB =40 1.6 IC/IB =10 1.2 IC/IB =100 1.2 1.0 0.8 0.8 0.6 0.6 V V 1.0 0.4 0.2 0.4 0.2 0 0 0.01 0.1 1 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC VCE=2V 1.6 750 1.2 1.0 500 0.8 0.6 1.2 1.0 0.6 V h 0.2 IC/IB =100 0.8 250 0.4 -55°C +25°C +100°C 1.4 - (Volts) - Typical Gain 1.4 0.01 10 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 0.4 0.
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ZHB6790 NPN TRANSISTOR TYPICAL CHARACTERISTICS Tamb=25°C IC/IB =200 IC/IB =100 0.8 0.8 - (Volts) - (Volts) IC/IB =10 0.6 0.4 V V 0 0.01 0.1 1 0.01 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC VCE =2V 1.6 1.2 1.0 1K 0.8 0.6 - (Volts) 1.5K - Typical Gain 1.4 10 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 IC/IB =100 1.4 1.2 1.0 0.6 V 0.4 -55°C +25°C +100°C 0.8 500 h - Normalised Gain 0.6 0.2 0 h 0.2 0.4 0.2 0 0 0.01 0.
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ZHB6790 SAFE OPERATING AREA 10 10 1 1 100m 10m 100m DC 1s 100ms 10ms 1ms 100µs DC 1s 100ms 10ms 1ms 100µs 100m 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area (Full Copper) see note below 100 10m 100m 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area (Minimum Copper) see note below Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating t
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ZHB6790 He A E 8 e1 1 2 7 D e2 3 b 6 4 5 A1 o 45° c Lp Dim 3 Millimetres Inches Min Typ Max Min Typ Max A 1.7 0.067 A1 0.02 0.1 0.0008 0.004 b 0.7 0.028 0.013 c 0.24 0.32 0.009 D 6.3 6.7 0.248 0.264 E 3.3 3.7 0.130 0.145 e1 4.59 0.180 e2 1.53 0.060 He 6.7 7.3 0.264 0.287 Lp 0.9 0.035 Zetex plc.