User Manual

UMC4N
Document number: DS31203 Rev. 5 - 2
2 of 6
www.diodes.com
January 2013
© Diodes Incorporated
UMC4N
Maximum Ratings, Pre-Biased NPN Transistor, Q
1
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Supply Voltage
V
CC
50 V
Input Voltage
V
IN
-10 to +40 V
Output Current
I
O
30 mA
Collector Current
I
C
100 mA
Maximum Ratings, Pre-Biased PNP Transistor, Q
2
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Supply Voltage
V
CC
-50 V
Input Voltage
V
IN
-40 to +6 V
Output Current
I
O
-100 mA
Collector Current
I
C
-100 mA
Thermal Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
P
D
150 mW
Thermal Resistance, Junction to Ambient Air (Note 6)
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
Electrical Characteristics, Pre-Biased NPN Transistor, Q
1
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
(Note 7)
V
I
(
OFF
)
0.5
⎯ ⎯
V
V
CC
= 5V, I
O
= 100μA
(Note 8)
V
I
(
ON
)
⎯ ⎯
3 V
V
O
= 0.3V, I
O
= 2mA
Output Voltage
V
O
(
ON
)
⎯
0.1 0.3 V
I
O
/ I
I
= 10mA/0.5 mA
Input Current
I
I
⎯ ⎯
0.18 mA
V
I
= 5V
Output Current
I
O
(
OFF
)
⎯ ⎯
0.5
μA
V
CC
= 50V, V
I
= 0V
DC Current Gain
G
I
68
⎯ ⎯ ⎯ V
O
= 5V, I
O
= 5mA
Gain-Bandwidth Product (Note 9)
f
T
⎯
250
⎯
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
Input Resistance
R
1
32.9 47 61.1
kΩ
⎯
Resistance Ratio
R
2
/R
1
0.8 1 1.2
⎯ ⎯
Note: 7. The device is guaranteed to be in “OFF” state with V
I(OFF)
up to 0.5V
8. The device is guaranteed to be in “ON” state with V
I(ON)
starting from 3V
9. Characteristic of Transistor – for reference only.
Electrical Characteristics, Pre-Biased PNP Transistor, Q
2
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
(Note 10)
V
I
(
OFF
)
-0.3
⎯ ⎯
V
V
CC
= -5V, I
O
= -100μA
(Note 11)
V
I
(
ON
)
⎯ ⎯
-1.4 V
V
O
= -0.3V, I
O
= -1mA
Output Voltage
V
O
(
ON
)
⎯
-0.1 -0.3 V
I
O
/ I
I
= -5mA/-0.25 mA
Input Current
I
I
⎯ ⎯
-0.88 mA
V
I
= -5V
Output Current
I
O
(
OFF
)
⎯ ⎯
-0.5
μA
V
CC
= -50V, V
I
= 0V
DC Current Gain
G
I
68
⎯ ⎯ ⎯ V
O
= -5V, I
O
= -5mA
Gain-Bandwidth Product (Note 12)
f
T
⎯
250
⎯
MHz
V
CE
= -10V, I
E
= 5mA, f = 100MHz
Input Resistance
R
1
7 10 13
kΩ
⎯
Resistance Ratio
R
2
/R
1
3.7 4.7 5.7
⎯ ⎯
Note: 10. The device is guaranteed to be in “OFF” state with V
I(OFF)
up to -0.3V
11. The device is guaranteed to be in “ON” state with V
I(ON)
starting from -1.4V
12. Characteristic of Transistor – for reference only.