User guide

MMST4124
Document number: DS30163 Rev. 9 - 2
1 of 3
www.diodes.com
January 2009
© Diodes Incorporated
MMST4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMST4126)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
25 V
Emitter-Base Voltage
V
EBO
5.0 V
Collector Current - Continuous (Note 1)
I
C
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
625
ο
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
30
⎯
V
I
C
= 10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(
BR
)
CEO
25
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
5.0
⎯
V
I
E
= 10μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
50 nA
V
CB
= 20V, I
E
= 0V
Emitter Cutoff Current
I
EBO
⎯
50 nA
V
EB
= 3.0V, I
C
= 0V
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
120
60
360
⎯
⎯
I
C
= 2.0mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE
(
SAT
)
⎯
0.30 V
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE
(
SAT
)
⎯
0.95 V
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.0 pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
8.0 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Small Signal Current Gain
h
fe
120 480
⎯
V
CE
= 1.0V, I
C
= 2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
300
⎯
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
Top View
Device Schematic
E
B
C
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