Manual
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) POWER TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; R
CE(sat)
44mΩ at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage
PARTMARKING DETAIL FZT968
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-15 V
Collector-Emitter Voltage V
CEO
-12 V
Emitter-Base Voltage V
EBO
-6 V
Peak Pulse Current I
CM
-20 A
Continuous Collector Current I
C
-6 A
Power Dissipation at T
amb
=25°C P
tot
3W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
(BR)CBO
-15 -28 V
I
C
=-100µA
V
(BR)CEO
-12 -20 V I
C
=-10mA*
V
(BR)EBO
-6 -8 V
I
E
=-100µA
Collector Cut-Off Current I
CBO
-10
-1.0
nA
µA
V
CB
=-12V
V
CB
=-12V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-10 nA V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-65
-132
-360
-130
-170
-450
mV
mV
mV
I
C
=-500mA, I
B
=-5mA*
I
C
=-2A, I
B
=-50mA*
I
C
=-6A, I
B
=-250mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1050 -1200 mV I
C
=-6A, I
B
=-250mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-870 -1050 mV I
C
=-6A, V
CE
=-1V*
Static Forward Current
Transfer Ratio
h
FE
300
300
200
150
450
450
300
240
50
1000
I
C
=-10mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
Transition Frequency f
T
80 MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance C
obo
161 pF V
CB
=-20V, f=1MHz
Switching Times t
on
t
off
120
116
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 294
FZT968
C
C
E
B
1m 100
1m 100
1m 100
0.1 100
1001m
I - Collector Current (A)
VCE(sat) v IC
0
0.4
0.8
800
400
0
I - Collector Current (A)
h
FE
v I
C
1.4
0.7
0
I
C
- Collector Current (A)
V
BE(on)
v IC
I - Collector Current (A)
VCE(sat) v IC
0
I - Collector Current (A)
V
BE(sat)
v I
C
100
0.1
V - Collector Emitter Voltage (V)
Safe Operating Area
µ
10m 100m 1 10
0.2
0.6
0.8
0.6
0.4
0.2
0
1m 10m 100m 1 10 100
10m 100m 1 10
200
600
10m 100m 1 10
0.4
0.8
1.2
1.6
10m 100m 1 10
110
1
10
TYPICAL CHARACTERISTICS
3 - 295
FZT968


