User guide

SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3  NOVEMBER 1995
FEATURES
* 2A continuous current
* Useful h
FE
up to 6A
* Fast Switching
PARTMARKING DETAIL  DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
100 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
10 V
Peak Pulse Current I
CM
6A
Continuous Collector Current I
C
2A
Power Dissipation P
tot
2W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
100 240 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80 110 V I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
10 16 V
I
E
=100µA
Collector Cut-Off Current I
CBO
0.01
10
µA
µA
V
CB
=80V
V
CB
=80V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=8V
Collector Cut-Off Current I
CES
10
µA
V
CES
=80V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.79
0.80
0.88
0.99
0.86
0.88
0.90
1.00
1.13
V
V
V
V
V
I
C
=0.25A, I
B
=0.25mA*
I
C
=0.4A, I
B
=0.4mA*
I
C
=1A, I
B
=1mA*
I
C
=2A, I
B
=20mA*
I
C
=2A, I
B
=20mA 
FZT603
C
C
E
B
 T
j
=150°C
Dim Millimeters Inches
Min Max Min Max
A 6.3 6.7 0.248 0.264
B 3.3 3.7 0.130 0.146
C  1.7  0.067
D 0.6 0.8 0.024 0.031
E 2.9 3.1 0.114 0.122
F 0.24 0.32 0.009 0.013
G NOM 4.6 NOM 0.181
H 0.85 1.05 0.033 0.041
K 0.02 0.10 0.0008 0.004
L 6.7 7.3 0.264 0.287
M NOM 2.3 NOM 0.0905
PACKAGE OUTLINE DETAILS
FZT603