Manual

ManualsBrandsDiodes ManualsHardwareFCX617

SOT89 NPN SILICON POWER

(SWITCHING) TRANSISTOR

ISSSUE 1 - NOVEMBER 1998

FEATURES

* 2W POWER DISSIPATION

* 12A Peak Pulse Current

* Excellent H

Characteristics up to 12 Amps

* Extremely Low Saturation Voltage E.g. 8mv Typ.

* Extremely Low Equivalent On-resistance;

CE(sat)

50mΩ at 3A

Partmarking Detail - 617

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

15 V

Collector-Emitter Voltage V

CEO

15 V

Emitter-Base Voltage V

EBO

Peak Pulse Current ** I

12 A

Continuous Collector Current I

Base Current I

500 mA

Power Dissipation at T

amb

=25°C P

tot

1 †

2 ‡

Operating and Storage Temperature Range T

stg

-55 to +150 °C

† recommended P

tot

calculated using FR4 measuring 15x15x0.6mm

‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

FCX617

Summary of content (3 pages)

PAGE 1
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR FCX617 ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 50mΩ at 3A C E C Partmarking Detail - B 617 ABSOLUTE MAXIMUM RATINGS.
PAGE 2
FCX617 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 15 V IC=100µA V(BR)CEO 15 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 0.3 100 nA VCB=10V Emitter Cut-Off Current IEBO 0.3 100 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.
PAGE 3
FCX617 TYPICAL CHARACTERISTICS 1 0.4 +25 °C IC/IB=60 0.3 100m 0.2 100°C 25°C 10m IC/IB=100 IC/IB=60 IC/IB=10 1m 1m -55°C 0.1 0.0 10m 1 100m 10 1mA 10mA 1.0 1.4 VCE=2V 10A 450 25°C 10A 100A IC/IB=60 1.2 1.0 0.8 -55°C 0.8 0.6 10A VCE(SAT) vs IC VCE(SAT) v IC 100°C 1A Collector Current IC - Collector Current (A) 1.2 100mA 25°C -55°C 225 0.4 0.6 100°C 0.4 0.2 0.2 0.0 0 1mA 10mA 100mA 1A 10A 100A 0.